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Gate drive device based on single output channel driver IC

A grid-driven, single-output technology, applied to static indicators, instruments, etc., can solve problems such as low threshold voltage, poor reliability, and grid intolerant to negative voltage shocks, and achieve the effect of improving reliability

Active Publication Date: 2022-08-02
SHENZHEN XINER SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a gate drive device based on a single output channel drive IC, the purpose of which is to solve the problems of low threshold voltage of the enhanced P-GaN power switching device, poor reliability of the grid due to negative voltage impact

Method used

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  • Gate drive device based on single output channel driver IC
  • Gate drive device based on single output channel driver IC
  • Gate drive device based on single output channel driver IC

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Embodiment Construction

[0028] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0029] It should be noted that the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as "first" or "second" may expres...

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Abstract

The present invention provides a gate driving device based on a single-output channel driver IC, comprising: a single-output channel driver IC, a voltage regulator circuit, a stabilization circuit, and a driver circuit; wherein, the output port of the single-output channel driver IC is connected to all The first port of the voltage stabilization circuit is connected to the first port of the voltage stabilization circuit, the second port of the voltage stabilization circuit is respectively connected to the first port of the stabilization circuit and the first port of the driving circuit, and the second port of the stabilization circuit is connected to the first port of the stabilization circuit. The second ports of the driving circuit are all connected to the gate of the P-type gallium nitride device, and the ground port of the single-output channel driver IC and the source of the P-type gallium nitride device are both grounded. The present invention can improve the reliability of the P-GaN gate.

Description

technical field [0001] The present invention relates to the technical field of semiconductor devices, in particular to a gate drive device based on a single output channel drive IC. Background technique [0002] GaN wide-bandgap semiconductor material, compared with Si material, has superior properties such as high breakdown electric field (up to 3MV / cm), high saturation electron drift velocity and good thermal conductivity, suitable for manufacturing applications in high frequency and high-power power devices. [0003] GaN material has a strong polarization effect, and the interface of the AlGaN / GaN heterojunction grown in the polarization direction forms a two-dimensional electron gas (2DEG) with a high concentration and high electron mobility around 1013cm-2 due to the polarization effect, making AlGaN / GaN heterojunction field-effect transistors (HFETs) have extremely low on-resistance, making them ideal for making power switching devices. Therefore, using GaN heterostr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G09G3/20
CPCG09G3/20G09G2310/0267
Inventor 张益鸣刘杰
Owner SHENZHEN XINER SEMICON TECH CO LTD