Thin film deposition equipment and wafer boat components

Abstract

The application discloses a thin film deposition device and a crystal boat component. The wafer boat assembly includes: a plurality of diaphragms stacked; and a side wall connecting the plurality of diaphragms together, the side wall is connected to a part of the peripheral area of ​​each of the diaphragms, so that The adjacent transverse partitions and the side walls jointly form a semi-enclosed space, wherein the semi-enclosed space between adjacent transverse partitions is used to accommodate at least one wafer, and the side walls are formed with a plurality of The gas inlet ends respectively supply gas to the semi-enclosed spaces. The wafer boat assembly adopts an isolation structure near the inlet end to eliminate the influence of wafer loading effect, so as to improve the film thickness consistency of wafers at different levels.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a thin film deposition device and a crystal boat assembly. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. As the market demands more and more storage capacity of a single memory chip, there are as many as 16 or more layers of bare chips stacked in a stacked package structu...

AI Technical Summary

Problems solved by technology

[0004] However, in a thin film deposition device, even though the flow rates of the reactive gases on multiple layers are approximately the same, multiple wafers on different layers will compete with each other for the reactive gases, resulting in differences in the reaction rates.

In the vertical direction of the wafer boat, there are differences in film thickness on different layers of the wafer, resulting in fluctuations in the electrical performance of 3D memory devices and a reduction in product yield.

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