A Classification Method of Power Device Quality Classification
A power device, quality grade technology, applied in the field of grade classification
Active Publication Date: 2022-05-17
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF8 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] However, the range of the current electrical parameter test standards is relatively wide, such as the I GSS (Gate source leakage current) parameter test standard is 0-100nA, and I GSS = 5nA and I GSS = 50nA power devices have significant differences in quality grades and service life. Therefore, it is urgent to propose a method for classifying power devices in order to finely classify power devices
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0023] The specific implementation manners according to the present invention will be described below in conjunction with the accompanying drawings.
[0024] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, therefore, the present invention is not limited to the specific embodiments disclosed below limit.
[0025] Such as figure 1 As shown, a specific embodiment of the power device quality level classification method involved in the present invention is provided, including the following steps:
[0026] S100. Provide a batch of power devices;
[0027] It should be further explained that the power device may be any power device such as VDMOS (Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor), IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) or others.
[002...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a method for classifying the quality of power devices, providing power devices; performing thermal response tests and electrical parameter tests on power devices, and calculating the variation; determining standard value ranges and allowable ranges of variation, and judging thermal response test results and electrical parameter tests Whether the result conforms to the standard value range; judge whether the variation exceeds the allowable variation range; establish quality grade classification standards, which include quality grades, and quality grades include test indicators for thermal response tests, test indicators for electrical parameter tests, and corresponding The determination index of the change amount, and each test index and judgment index corresponds to a reference range, and each reference range corresponds to a score; based on the thermal response test results, electrical parameter test results and the reference range to which the change amount belongs, the corresponding The score value; add the thermal response test results, electrical parameter test results and the corresponding scores to obtain the total score; classify based on the score and the total score.
Description
technical field [0001] The invention relates to the technical field of power device screening, in particular to a method for classifying power device quality grades. Background technique [0002] Before the power device is put into formal application, it is necessary to remove early failures or poor quality products in the batch. The specific removal method is to conduct various electrical parameter tests on the power device, and compare the test results of each electrical parameter with the test standards of each electrical parameter. For comparison, if the test results of all electrical parameters meet the test standards, it will be judged as a qualified power device; if one of the electrical parameter test results does not meet the test standards, it will be judged as an unqualified power device, and it will be removed from the batch removed. [0003] However, the range of the current electrical parameter test standards is relatively wide, such as the I GSS (Gate source...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2621G01R31/2628G01R31/2608G01R31/2619
Inventor 张宇隆苏洪源董晨曦王路璐郝乐刘梦新罗家俊韩郑生
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI