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dbr structure, led chip, semiconductor light-emitting device, manufacturing method, and display panel

A technology for LED chips and light-emitting devices, applied in semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of large chip light leakage, not considering chip light reflection, affecting the optical performance of end products, etc., to improve and reduce light leakage problems. Front light transmittance, the effect of improving the display effect

Active Publication Date: 2022-01-18
XIAMEN SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This solution only considers the light reflection at the chip end, and does not consider the light reflection problem of the chip in the application after packaging. Usually, there is still a large light leakage on the front of the chip at the application side after the chip is packaged, forming a hot spot, which in turn affects the terminal. Optical properties of the product

Method used

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  • dbr structure, led chip, semiconductor light-emitting device, manufacturing method, and display panel
  • dbr structure, led chip, semiconductor light-emitting device, manufacturing method, and display panel
  • dbr structure, led chip, semiconductor light-emitting device, manufacturing method, and display panel

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Embodiment 1

[0095] This embodiment provides a distributed Bragg reflection structure, such as Figure 3a As shown, the distributed Bragg reflection structure (DBR structure) 100 of this embodiment includes multiple reflective film groups 1001 , and the multiple reflective film groups form a first film stack structure 101 and a second film stack structure 102 .

[0096] Such as Figure 3a As shown, in an optional embodiment of this embodiment, each reflective film group 1001 in the DBR structure 100 includes a first material layer 1011 and a second material layer 1012 stacked in sequence, and the first material layer 1011 and the second material layer 1011 The two material layers 1012 have different refractive indices. In the stacking direction of the membrane stack structure, the second membrane stack structure 102 is located above the first membrane stack structure 101 , and both the first membrane stack structure 101 and the second membrane stack structure 102 include a plurality of re...

Embodiment 2

[0104] This embodiment provides an LED chip, such as Figure 5 As shown, the LED chip 300 includes a substrate 301, the substrate 301 includes a first surface and a second surface opposite to each other; a light-emitting epitaxial layer formed on the first surface of the substrate 301, and a DBR structure on the second surface.

[0105] In this embodiment, the light-emitting epitaxial layer may include a first semiconductor layer 303, a quantum well layer 304, and a second semiconductor layer 305 sequentially formed on the first surface of the substrate 301. A buffer layer 302 is also formed between the layers 303 . Taking the GaN epitaxial layer as an example, the above-mentioned first semiconductor layer is n-type GaN, and the second semiconductor layer is p-type GaN. Such as Figure 6 As shown, the LED chip also includes an electrode 306 formed above the light-emitting epitaxial layer, and the electrode 306 includes a first electrode 3061 and a second electrode 3062 resp...

Embodiment 3

[0112] This embodiment provides a semiconductor light emitting device, such as Figure 6 As shown, the semiconductor light emitting device 200 includes:

[0113] Packaging bracket 201, the mounting bracket 201 can be any mounting bracket suitable for mounting and fixing LED chips. Such as Figure 6 As shown, in an alternative embodiment of this embodiment, the packaging bracket 201 is provided with a packaging groove on one side of the mounting layer, and the packaging groove is used for accommodating and mounting LED chips. An electrode layer 202 is provided on the bottom of the mounting side of the packaging support 201 , and the electrode layer 202 includes two electrode layers arranged at intervals, respectively connected to the electrodes of the LED chip.

[0114] LED chip 300, refer to Figure 5 and combine Figure 7 ~ Figure 9 , the LED chip 300 includes:

[0115] A substrate 301, the substrate 301 includes a first surface and a second surface oppositely arranged; ...

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Abstract

The invention provides a DBR structure, an LED chip, a semiconductor light-emitting device and its manufacturing method, and a display panel. The DBR structure includes a plurality of reflective film groups, and each reflective film group includes sequentially stacked first reflective film groups with different refractive indices. A material layer and a second material layer; a plurality of reflective film groups are formed into a first film stack structure and a second film stack structure located above the first film stack structure, and the first film stack structure and the second film stack structure both include A plurality of reflective film groups; the second material layer includes oxide, and the oxygen content of the oxide of the second material layer forming the first film stack structure is different from that of the second material layer forming the second film stack structure. For example, the oxygen content of the second material layer of the second membrane stack structure is smaller than the oxygen content of the second material layer of the first membrane stack structure. The first film stack structure in the above DBR structure maximizes the internal reflection of the chip, and the second film stack structure increases the absorption of light at Brewster's angle and nearby, thereby reducing the front light transmittance of the chip.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a DBR structure, an LED chip, a semiconductor light emitting device, a manufacturing method thereof, and a display panel. Background technique [0002] As a light source, LED chips have been rapidly developed in the field of lighting. In recent years, Mini LED, as an improved version of LED backlight technology, has been rapidly popularized because it can greatly improve the image quality of LCD panels. [0003] In order to improve the light output effect of Mini LED, the Mini LED chip flip-chip solution is adopted. In addition, since the light emitting angle of the chip will directly determine multiple optical performances of the chip, the control of the light emitting angle of the Mini LED chip is also a key point and difficulty in its technical route. The current conventional method is to coat a distributed Bragg reflection (distributed Bragg reflection, DBR) structure o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/46H01L27/15
CPCH01L33/46H01L27/156H01L2933/0025
Inventor 王庆何敏游栗伟陈大钟洪灵愿林素慧张中英
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD
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