Unlock instant, AI-driven research and patent intelligence for your innovation.

DBR structure, LED chip, semiconductor light-emitting device, manufacturing method of semiconductor light-emitting device and display panel

A technology of LED chip and reflective structure, which is applied in the direction of semiconductor devices, instruments, electrical components, etc., can solve the problems of large chip light leakage, not considering chip light reflection, affecting the optical performance of end products, etc., and achieve the effect of preventing chipping and edge chipping

Active Publication Date: 2021-12-21
XIAMEN SANAN OPTOELECTRONICS CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This solution only considers the light reflection at the chip end, and does not consider the light reflection problem of the chip in the application after packaging. Usually, there is still a large light leakage on the front of the chip at the application side after the chip is packaged, forming a hot spot, which in turn affects the terminal. Optical properties of the product

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • DBR structure, LED chip, semiconductor light-emitting device, manufacturing method of semiconductor light-emitting device and display panel
  • DBR structure, LED chip, semiconductor light-emitting device, manufacturing method of semiconductor light-emitting device and display panel
  • DBR structure, LED chip, semiconductor light-emitting device, manufacturing method of semiconductor light-emitting device and display panel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0109] This embodiment provides a distributed Bragg reflection structure, such as Figure 3a As shown, the distributed Bragg reflection structure 100 (DBR structure) of this embodiment includes reflective film groups 1001, and each reflective film group 1001 includes a first material layer 1011 and a second material layer 1012 stacked in sequence, the first material layer The refractive indices of the layer 1011 and the second material layer 1012 are different. In an optional embodiment of this embodiment, in the stacking direction of the reflective film group, the distributed Bragg reflective structure 100 further includes: a first region 101 and a second region 102, and the first material layer is The first region and the second region have different optical thickness ranges, and the second material layer has different optical thickness ranges in the first region and the second region.

[0110] In a preferred embodiment of this embodiment, the refractive index of the first ...

Embodiment 2

[0116] This embodiment provides an LED chip, such as Figure 6 As shown, the LED chip 300 includes a substrate 301, the substrate 301 includes a first surface and a second surface opposite to each other; a light-emitting epitaxial layer formed on the first surface of the substrate 301, and a DBR structure on the second surface.

[0117] In this embodiment, the light-emitting epitaxial layer may include a first semiconductor layer 303, a quantum well layer 304, and a second semiconductor layer 305 sequentially formed on the first surface of the substrate 301. A buffer layer 302 is also formed between the layers 303 . Taking the GaN epitaxial layer as an example, the above-mentioned first semiconductor layer is n-type GaN, and the second semiconductor layer is p-type GaN. Such as Figure 6 As shown, the LED chip also includes an electrode 306 formed above the light-emitting epitaxial layer, and the electrode 306 includes a first electrode 3061 and a second electrode 3062 resp...

Embodiment 3

[0127] This embodiment provides a semiconductor light emitting device, such as Figure 7 As shown, the semiconductor light emitting device 200 includes:

[0128] Packaging bracket 201, the mounting bracket 201 can be any mounting bracket suitable for mounting and fixing LED chips. Such as Figure 7 As shown, in an optional embodiment of this embodiment, the packaging bracket 201 is provided with a die-bonding area on the side of the mounting layer, and the die-bonding area is used for mounting LED chips. The groove is taken as an example, and of course it can also be any other form of crystal-bonding area. An electrode layer 202 is provided on the bottom of the mounting side of the packaging support 201 , and the electrode layer 202 includes two electrode layers arranged at intervals, respectively connected to the electrodes of the LED chip.

[0129] LED chip 300, refer to Figure 6 and combine Figure 7 ~ Figure 11 , the LED chip 300 includes:

[0130] A substrate 301, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
angleaaaaaaaaaa
Login to View More

Abstract

The invention discloses a DBR structure, an LED chip, a semiconductor light-emitting device, a manufacturing method of the semiconductor light-emitting device and a display panel. The DBR structure comprises a plurality of reflecting film groups (1001), and each reflecting film group (1001) comprises a first material layer (1011) and a second material layer (1012) which are stacked in sequence and have different refractive indexes; wherein along the stacking direction of the reflective film group (1001), the DBR structure comprises a first region (101) and a second region (102), the optical thickness ranges of the first material layer (1011) in the first region (101) and the second region (102) are different, and the optical thickness ranges of the second material layer (1012) in the first region (101) and the second region (102) are different. The DBR structure may also include a second material layer (1012) disposed below the reflective film set (1001). The refractive index of the first material layer (1011) is smaller than the refractive index of the second material layer (1012). By setting different optical thicknesses of the material layer, the reflection of the first region (101) of the DBR structure to the interior of the chip is maximized, and the second region (102) has lower transmissivity to light of 35-45 degrees and 50-55 degrees, so that the front light transmittance of the chip is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a DBR structure, an LED chip, a semiconductor light emitting device, a manufacturing method thereof, and a display panel. Background technique [0002] As a light source, LED chips have been rapidly developed in the field of lighting. In recent years, Mini LED, as an improved version of LED backlight technology, has been rapidly popularized because it can greatly improve the image quality of LCD panels. [0003] In order to improve the light output effect of Mini LED, the Mini LED chip flip-chip solution is adopted. In addition, since the light emitting angle of the chip will directly determine multiple optical performances of the chip, the control of the light emitting angle of the Mini LED chip is also a key point and difficulty in its technical route. The current conventional method is to coat a distributed Bragg reflection (distributed Bragg reflection, DBR) structure o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/46H01L33/06H01L33/00G09F9/33
CPCH01L33/46H01L33/10H01L27/156G02F1/1336G02F2201/346
Inventor 王庆栗伟何敏游刘士伟洪灵愿林素慧张中英
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com