A semiconductor grade silicon single crystal furnace crucible lifting device and silicon single crystal furnace

A lifting device, silicon single crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of pallet picking and placing, pollution, narrow gap, etc., and achieve low requirements, avoid touching the furnace wall, The effect of reducing occupancy

Active Publication Date: 2022-07-08
南京晶能半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

by the figure 1 As we know, the gap between the crucible tray 1' and the inner wall of the furnace body 3' is very narrow, and when the crucible and the crucible tray are taken out or put back from the furnace body, the furnace body 3' cannot be touched to avoid contamination of the furnace by impurities. environment, so it is very troublesome to take and place the crucible and the crucible tray

Method used

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  • A semiconductor grade silicon single crystal furnace crucible lifting device and silicon single crystal furnace
  • A semiconductor grade silicon single crystal furnace crucible lifting device and silicon single crystal furnace
  • A semiconductor grade silicon single crystal furnace crucible lifting device and silicon single crystal furnace

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Embodiment Construction

[0029] please combine Figure 2 to Figure 7 As shown in the figure, the present embodiment discloses a semiconductor-grade silicon single crystal furnace crucible lifting device, which includes a support 1, a cross turntable 2 on the support 1, a push rod 3 connected to the cross turntable 2, a plurality of first connecting rods 4, a plurality of The second connecting rod 5 , several third connecting rods 6 , the screw rod 7 , the sliding block 8 , and the hanger 9 .

[0030] The cross turntable 2 includes four rotating arms 21 extending outward from the middle position, and the four rotating arms 21 together form a "cross" shape. The middle position of the cross turntable 2 is hinged with the bracket 1 and can be rotated on the bracket 1 . The rear end of each first link 4 is hinged with the front end of a rotating arm 21 . The front end of each first link 4 is hinged with the rear end of one second link 5 . The front end of each second link 5 is hinged with the upper end ...

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Abstract

The invention discloses a crucible lifting device for a semiconductor-grade silicon single crystal furnace and a silicon single crystal furnace. The hoisting device surrounds the crucible tray through a downwardly extending third connecting rod, and carries the crucible tray through a hook and pulls it out. The opening and closing operations of the third link are driven by the first and second links and the cross turntable on the bracket. The first and second links and the cross turntable do not occupy space in the furnace, and can control the first and second links more accurately. The angle of the three-link opening and closing to avoid touching the furnace wall. The crucible lifting device occupies little space in the furnace, and is specially used in the environment where the gap between the crucible and the furnace wall is small in the silicon single crystal furnace.

Description

technical field [0001] The invention belongs to the technical field of silicon single crystal furnaces. Background technique [0002] In the field of semiconductor technology in the prior art, a silicon single crystal furnace needs to be used to prepare a silicon wafer by a pulling method. For example, the Chinese patent application with publication number 105177701A discloses a prior art silicon single crystal furnace. The crystal is prepared in the crucible, and the crucible is set on the pulling shaft through the crucible tray. The periphery of the crucible is a furnace body with a thermal field. [0003] During the preparation of the single crystal furnace, the required procedures include taking out the crucible and the crucible tray from the furnace body, or putting them back into the furnace body. And if figure 1 As shown, when the crucible tray 1' carrying the crucible is carried on the pulling shaft 2', the state diagram in the furnace body 3'. by the figure 1 ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 姜宏伟郭志强郑锴
Owner 南京晶能半导体科技有限公司
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