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A kind of large-angle medium and long-wave infrared anti-reflection protective film and preparation method thereof

A long-wave infrared, large-angle technology, applied in optical components, instruments, optics, etc., can solve problems such as low transmittance, control error, and affecting the bonding strength of the film layer and the substrate

Active Publication Date: 2022-03-15
SINOMA SYNTHETIC CRYSTALS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its low transmittance will affect the normal operation of the photoelectric detection system
In addition, the mechanical properties of ZnS are poor. When used as a lens, window or hood of a photoelectric detection system, it is difficult to resist the erosion of sand and raindrops in the atmospheric environment, let alone the impact caused by severe aerodynamic heat or external force. damage
[0003] At present, the infrared anti-reflection protective film is designed with a multi-layer structure. If the film layer is too thin, it is easy to produce control errors, resulting in a decrease in optical performance, thereby affecting the light transmittance; if the film layer is too thick, it will easily cause peeling due to stress accumulation. Phenomenon, if the total thickness of the film layer is too thick, it will also affect the bonding strength between the film layer and the substrate
In addition, when the light is incident at a large angle, it will produce a serious polarization effect, which will greatly reduce the transmittance of the light

Method used

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  • A kind of large-angle medium and long-wave infrared anti-reflection protective film and preparation method thereof
  • A kind of large-angle medium and long-wave infrared anti-reflection protective film and preparation method thereof
  • A kind of large-angle medium and long-wave infrared anti-reflection protective film and preparation method thereof

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preparation example Construction

[0031] The second aspect of the present invention provides a method for preparing a large-angle medium and long-wave infrared anti-reflection protective film, comprising the following steps:

[0032] 1) Polishing and surface treatment are carried out to the ZnS substrate;

[0033] 2) On the ZnS substrate, deposit the first ZnS layer, the first YbF layer in sequence 3 layer, second ZnS layer, second YbF 3 layer, third ZnS layer, third YbF 3 layer and Al 2 o 3 outer layer;

[0034] Among them, the thickness of each layer is:

[0035] 1st ZnS layer: 80-120nm, 1st YbF 3 Layer: 140-160nm, 2nd ZnS layer: 230-250nm, 2nd YbF 3 Layer: 370-390nm, third ZnS layer: 150-160nm, third YbF 3 Layer: 920-930nm, Al 2 o 3 Outer layer: 30-90nm.

[0036] Preferably, the deposition evaporation beam current of the first ZnS layer, the second ZnS layer and the third ZnS layer is 15-25mA, and the first YbF 3 layer, second YbF 3 layer and third YbF 3 The deposition evaporation beam current...

Embodiment 1

[0056] 1) Choose a ZnS base layer with a thickness of 1.5mm, and perform mechanical polishing to make the surface finish reach level III. Surface treatment was carried out on the polished ZnS base layer, respectively, using acetone, absolute ethanol, and pure water to clean it in ultrasonic waves for 10 minutes. After taking it out, wipe the surface and dry it in an oven at 100°C for 10 minutes. Clean the surface of the dried ZnS base layer, wipe the surface with nano-diamond powder for 5 minutes, and then wipe it with absolute ethanol until the surface is clean, and place it on the sample holder in the chamber of the coating machine.

[0057] 2) Place the coating materials ZnS and YbF3 in molybdenum boats respectively, and place the coating materials Al 2 o 3 Placed in the electron gun crucible. Seal the vacuum chamber and form a vacuum environment. At the same time, heat and bake the substrate. The baking temperature is 200°C. When the vacuum degree reaches 3.8×10 -3 At P...

Embodiment 2

[0067] 1) A ZnS base layer with a thickness of 2mm is selected and mechanically polished to make the surface finish reach level IV. Surface treatment was carried out on the polished ZnS base layer, respectively, using acetone, absolute ethanol, and pure water to clean it in ultrasonic waves for 10 minutes. After taking it out, wipe the surface and dry it in an oven at 100°C for 10 minutes. Clean the surface of the dried ZnS base layer, dip a small amount of nano-diamond powder to wipe the surface for 3 minutes, replace the absorbent cotton with absolute ethanol to wipe until the surface is clean, and place it on the sample holder in the chamber of the coating machine.

[0068] 2) Place the coating materials ZnS and YbF3 in molybdenum boats respectively, and place the coating materials Al 2 o 3 Placed in the electron gun crucible. Seal the vacuum chamber and form a vacuum environment. At the same time, open the substrate for heating and baking. The baking temperature is 180°C. ...

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Abstract

The invention provides a large-angle medium-long-wave infrared anti-reflection protective film, which comprises a first ZnS layer, a first YbF layer arranged on a ZnS substrate in sequence 3 layer, second ZnS layer, second YbF 3 layer, third ZnS layer, third YbF 3 layer and Al 2 o 3 Outer layer; Wherein, the thickness of each layer is: the first ZnS layer: 80-120nm, the first YbF 3 Layer: 140‑160nm, 2nd ZnS layer: 230‑250nm, 2nd YbF 3 Layer: 370‑390nm, third ZnS layer: 150‑160nm, third YbF 3 Layer: 920‑930nm, Al 2 o 3 Outer layer: 30-90nm; the average transmission of light with a wavelength of 3-5 μm when the large-angle medium- and long-wave infrared antireflection protective film is at an incident angle of 45-47.2°, 50-60°, and 65-70° The rates were 85‑92%, 80‑90%, and 62‑68%, respectively. When light is incident at a large angle, it has high transmittance, good matching between film layers, and more stable structure.

Description

technical field [0001] The invention relates to the field of infrared optical materials, in particular to a large-angle medium and long-wave infrared antireflection protective film and a preparation method thereof. Background technique [0002] The infrared anti-reflection protective film is mainly used as the lens, window and hood of the photoelectric detection system, which is in direct contact with the external environment, so it needs to have a high transmittance to light and have good mechanical properties. The transmission band of ZnS material covers the whole band from visible light to long-wave infrared, and has excellent thermo-optic performance, so it is widely used in infrared anti-reflection protective film. However, ZnS has a transmittance of 72% when the incident angle of light is 0°, and has a very low transmittance when the incident angle of light is 70°. Its low transmittance will affect the normal operation of the photoelectric detection system. In additi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B1/115
CPCG02B1/115
Inventor 张旭钱纁肖红涛党参张克宏宫月
Owner SINOMA SYNTHETIC CRYSTALS CO LTD