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Method for manufacturing a detection structure with an optimized absorption rate, and said structure

A technology for detecting structures and absorbing elements, applied in electric radiation detectors, radiation pyrometry, measuring devices, etc., can solve the problem of low impedance

Pending Publication Date: 2021-08-13
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0016] In fact, even though absorbing elements can be provided according to the teachings of this document, the impedance of which is close to that of a vacuum, i.e. approximately 376.9Ω, the total impedance of the structure (ie, the impedance perceived by the electromagnetic wave to be absorbed) is actually lower, so does not enable optimal absorption

Method used

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  • Method for manufacturing a detection structure with an optimized absorption rate, and said structure
  • Method for manufacturing a detection structure with an optimized absorption rate, and said structure
  • Method for manufacturing a detection structure with an optimized absorption rate, and said structure

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Embodiment Construction

[0086] figure 1 A schematically shows a detection structure 10 of the bolometer type according to the invention, which detection structure 10 is suitable for detecting electromagnetic radiation.

[0087] Such a detection structure 10 is more specifically aimed at the detection of electromagnetic radiation in the infrared wavelength range. Therefore, the various values ​​given in the examples described below relate to the practical application in which the target wavelength range is the far infrared between 8 μm and 12 μm. Of course, these values ​​are provided only as non-limiting examples, since a person skilled in the art is fully capable of adjusting these values ​​based on the present disclosure, so that the use of this detection structure 10 can optimally detect electromagnetic radiation in wavelength ranges other than infrared .

[0088] This detection structure 10 comprises:

[0089] - A transistor 100 of MOS type, associated with an absorbing element 128 to detect a...

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Abstract

The invention concerns a method for forming a detection structure (10) for detecting electromagnetic radiation comprising an MOS transistor (100) as a transducer. The method is based on the use of lateral extension elements (134, 135, 136) as a doping mask for the semiconductor layer (113P) of the transistor and an etching mask for the same semiconductor layer 113P), in order to provide contact portions (111A, 112A) of a drain and a source of the transistor (100). The invention further concerns a detection structure (10) capable of being obtained by such a method.

Description

[0001] This invention arose out of a contract awarded by the French Ministry of Defense, which has certain rights in the invention. technical field [0002] The invention relates to structures for detecting electromagnetic radiation, in particular for detecting electromagnetic radiation in the infrared range. [0003] More precisely, the object of the invention is a structure for detecting electromagnetic radiation and a method for producing such a structure. Background technique [0004] For the detection of electromagnetic radiation, in particular in the infrared wavelength range, it is known to use bolometer-type electromagnetic radiation detection structures. [0005] This structure includes: [0006] - absorbing elements configured to absorb electromagnetic radiation, usually provided in the form of suspended membranes, [0007] - A transducer having temperature-dependent properties associated with the absorbing element to be able to detect a temperature rise of said ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/20
CPCG01J5/20G01J5/24G01J5/024H01L29/78651H01L29/66742G01J5/0853H01L31/1136
Inventor 阿卜杜卡迪尔·阿利亚内让-路易斯·乌夫里耶-比费
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES