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CVD reactor having means for locally influencing the susceptor temperature

A base and device technology, used in semiconductor/solid-state device manufacturing, electrical components, gaseous chemical plating, etc.

Pending Publication Date: 2021-09-28
AIXTRON AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The technical challenge is to design the transverse temperature profile of the top side of the base on which the substrate is arranged to be as uniform as possible

Method used

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  • CVD reactor having means for locally influencing the susceptor temperature
  • CVD reactor having means for locally influencing the susceptor temperature
  • CVD reactor having means for locally influencing the susceptor temperature

Examples

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Embodiment Construction

[0023] This type of CVD reactor (see figure 1 ) has a CVD reactor housing 1 which is gas-tight, may consist of stainless steel and may have cooled walls. The CVD reactor housing has, in particular, a cover 2 , a side wall 3 , which may be formed cylindrically, and a bottom 4 opposite the cover 2 . The cover 2, the side walls 3 and the bottom 4 may be cooled.

[0024] Process gas can be fed into the process chamber by means of the gas inlet device 6 . The process chamber is delimited upwardly by the process chamber cover 11 and downwardly by the base 5 . The base 5 is made of graphite or another electrically conductive material and can be driven in rotation about the axis A around the carrier 12 . A rotary drive 20 is used for this. A rotation sensor (not shown) is provided, by means of which the corresponding rotational angular position of the base 5 can be determined. The angle of rotation is transmitted to a controller not shown.

[0025] Below the susceptor 5 there is...

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Abstract

The invention relates to a device and a method for the thermal treatment of substrates using a susceptor (5), which can be heated with a heater (13) and driven in rotation about a rotation axis (A) by a rotary drive (20), to hold the at least one substrate.Means (14, 14'; 15, 16) are provided to influence the heat transfer to or from the susceptor (5) in a locally limited manner synchronized with the rotary movement of the susceptor (5) to equalize local temperature differences on the rotating susceptor (5).In particular, a temperature control gas with changing heat conduction properties is periodically fed in a periodically pulsed manner through a feed opening (14') into a gap (10) between the susceptor (5) and a cooling unit (30).

Description

technical field [0001] The invention relates to a device for thermally treating substrates, which has a base for receiving at least one substrate, which can be heated by a heating device and driven in rotation by a rotary drive about an axis of rotation. [0002] The invention also relates to a method for thermally treating substrates, in which method a susceptor carries at least one substrate, is heated by a heating device, and is driven in rotation about an axis of rotation. Background technique [0003] Document US Pat. No. 8,249,436 B2 describes a device and a method in which heat is introduced into a susceptor rotating about an axis of rotation in a locally limited manner by means of a pulsed laser beam. [0004] Devices and methods of the aforementioned type are also known, for example from document DE 10 2009 044 276 A1. A device of the aforementioned type is embodied by a CVD reactor having a gas-tight housing in which the process chamber is located. The bottom of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/46C23C16/52
CPCC23C16/46C23C16/52H01L21/68771H01L21/67248H01L21/67109C23C16/4586C23C16/4584H01L21/68764H01L21/67103C23C16/466C23C16/45508
Inventor P.S.劳弗
Owner AIXTRON AG
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