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Method for transferring a useful layer onto a support substrate

A transfer method and carrier substrate technology, applied in the field of microelectronics, can solve the problems of inhomogeneity of the useful layer 3, difficulty in eliminating inhomogeneity, etc.

Pending Publication Date: 2021-10-08
SOITEC SA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This contributes to the inhomogeneity of the useful layer 3
[0012] This inhomogeneity in the thickness of the useful layer 3 is difficult to remove using the usual trimming techniques (etching, sacrificial oxidation, smoothing heat treatment, etc.), since these techniques are ineffective in erasing irregular patterns of this magnitude

Method used

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  • Method for transferring a useful layer onto a support substrate
  • Method for transferring a useful layer onto a support substrate
  • Method for transferring a useful layer onto a support substrate

Examples

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Embodiment Construction

[0043] In the description, the same reference numerals may be used for the same type of elements in the drawings. The figures are schematic representations, not drawn to scale for the sake of clarity. In particular, the thicknesses of the layers along the z-axis are not proportional to the lateral dimensions along the x- and y-axes; the relative thicknesses of these layers relative to each other are not necessarily relative in the drawings. It should be noted that figure 1 The coordinate system (x,y,z) for figure 2 .

[0044] The invention relates to a method for transferring a useful layer 3 onto a carrier substrate 4 . The useful layer 3 is so named because it is intended for the production of components in the field of microelectronics or microsystems. The properties of the useful layer and the carrier substrate may vary depending on the target component type and target application. Since silicon is currently the most commonly used semiconductor material, the useful l...

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Abstract

The invention relates to a method for transferring an useful layer onto a support substrate, said method involving the following steps: a) providing a donor substrate comprising a buried fragile plane, the useful layer being delimited by a front face of the donor substrate and the buried fragile plane; b) providing a support substrate; c) joining the donor substrate by its front face to the support substrate over a bonding interface to form a bonded structure; d) annealing the bonded structure to apply a weakening thermal budget thereto and bringing the buried fragile plane to a defined break-off level; e) initiating a fracture wave in the buried fragile plane by applying stress to the bonded structure, the fracture wave self-propagating along the buried fragile plane to lead to the transfer of the useful layer onto the support substrate. The transfer method is characterized in that the fracture wave is initiated while the bonded structure is subjected to a maximum temperature of 150 DEG C to 250 DEG C.

Description

technical field [0001] The present invention relates to the field of microelectronics. In particular, the invention relates to methods for transferring useful layers onto carrier substrates. Background technique [0002] figure 1 The illustrated method of transferring the useful layer 3 to the carrier substrate 4 is known from the prior art; this method is described in detail in the documents WO 2005043615 and WO 2005043616 and comprises the following steps: [0003] Formation of a buried weakened face 2 by implanting a light substance in the donor substrate 1 so that a useful layer 3 is formed between this face and the surface of the donor substrate; [0004] · Next, bonding the donor substrate 1 to the carrier substrate 4 to form the bonding structure 5; [0005] heat treatment of the joint structure 5 to weaken the embedded weakening surface; [0006] • And finally, a splitting wave is induced by an energy pulse applied at the level of the buried weakening layer 2 , w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762
CPCH01L21/76254H01L21/26506H01L21/7806
Inventor 迪迪埃·朗德吕O·科农丘克纳迪娅·本默罕默德
Owner SOITEC SA
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