Packaging structure and packaging method of power module with multiple chips connected in parallel

Abstract

The invention discloses a packaging structure and a packaging method of a power module with multiple chips connected in parallel. The packaging structure and the packaging method can be applied to a silicon power module and a wide bandgap semiconductor power module with silicon carbide, gallium nitride and the like. The packaging structure comprises a heat dissipation substrate, an insulation substrate, a power chip attached to the insulation substrate, a driving resistor, a thermistor, a laminated insulation block, a decoupling capacitor, a bonding wire, a pouring sealant, a shell and a terminal. According to the structure, dynamic commutation loops with the same length are provided for the power chips connected in parallel through the decoupling capacitors, and the terminal inductors are dynamically decoupled, so that the dynamic current difference of the power chips connected in parallel in the switching process and the voltage peak in the switching-off process are reduced; and a driving signal line of the power switch tube chip adopts a Kelvin connection mode, so that the driving stability is enhanced. The packaging method provided by the invention can provide a reliable processing method for the packaging structure, so that the packaging structure can be realized, the cost is low, and the processing quality is good.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices. More specifically, it relates to a packaging structure and packaging method of a multi-chip parallel-connected power module. Background technique [0002] With the rapid development of transportation, aerospace and other fields, new requirements are put forward for existing power modules and power systems. In the power supply system, the switching speed of the power module switching tube continues to increase, and the switching loss continues to decrease, which can make the operating frequency of the converter continue to increase and the volume continue to decrease. [0003] However, most of the existing commercial power modules have relatively large parasitic inductance parameters (the parasitic inductance of the commutation circuit can reach more than 15nH), which makes the switching tube chip withstand a large peak voltage when it is turned off at high speed, and the swit...

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