Avalanche photodetector (variants) and method for manufacturing the same (variants)
A photodetector, avalanche photoelectric technology, applied in the direction of circuits, electrical components, semiconductor devices, etc.
Pending Publication Date: 2021-10-29
蒂凡有限责任公司
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- Abstract
- Description
- Claims
- Application Information
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Finally, in cases where multiple such amplifiers are used in the same APD, the claimed APD design produces less interfering noise from adjacent avalanche amplifiers
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[0043] Reference numbers used in this disclosure and drawings (except the number 100 (incident light)) consist of three digits, where the first digit is the figure number and the last two digits designate a specific element of the design.
[0044] For example, tag 306 points to image 3 Element number 06 in (see list below).
[0045] The following tags are used to refer to specific elements of the design:
[0046] 01-wafer,
[0047] 02-multiplication layer,
[0048] 03 - Avalanche Amplifier,
[0049] 04-photoelectric converter,
[0050] 05-contact layer,
[0051] 06 - first electrode,
[0052] 07 - second electrode,
[0053] 08 - closed groove,
[0054] 09-dielectric layer,
[0055] 10 - layer of high resistance material,
[0056] 11 - Transparent electrodes.
[0057] figure 1 shows a schematic cross-section of a claimed APD according to a first embodiment, the APD comprising: a semiconductor wafer 101; a multiplication layer 102 covering the entire surface of the ...
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Abstract
This invention relates to avalanche photodetectors (APD) that are capable of recording weak light signals, and can be used in LiDARs, communications systems, machine vision, robotics, medicine, biology, environmental monitoring, etc. The claimed APD includes a wafer carrying both a photoconverter that converts optical signals to be detected into free charge carrier current and at least one avalanche amplifier of this current, the amplifier comprising two layers, namely a contact layer and a multiplication layer, wherein the multiplication layer is formed upon the entire conductive wafer. The contact layer of at least one avalanche amplifier is formed in a certain area of the multiplication layer, while outside the contact layer, the multiplication layer functions as a photoconverter. As a result, the photocarriers that have been initiated by the photoconverter will get into the multiplication region of the avalanche amplifier unimpeded and with high efficiency, which results in a higher threshold sensitivity of the instrument. Variants of the photodetector that have less dark current seeping from the wafer and suppress photoelectric communication noises from adjacent avalanche amplifiers make it possible to manufacture multichannel avalanche instruments, whose threshold sensitivity is several times as high as that of conventional APDs, especially in the situation of excessive background illumination, which is typical of vehicle LiDARs.
Description
technical field [0001] The present invention relates to an avalanche photodetector (APD) capable of detecting weak light signals. Such APDs are widely used in LiDAR, communication systems, machine vision, robotics, medicine, biology, environmental monitoring, etc. Background technique [0002] A conventional avalanche photodetector (APD) includes multiple layers of semiconductor material placed one behind the other on a semiconductor wafer. [0003] A set of semiconductor layers forms a photoelectric converter in which signal photons are absorbed to generate free charge carriers, either electrons or electron holes. These light-generated charge carriers then enter another set of semiconductor layers, the avalanche amplifier, inside which a region of electric field strength is high enough to avalanche multiply the charge carriers. [0004] Threshold sensitivity is a major parameter of an APD and depends on the characteristics of both the photoelectric converter and the avala...
Claims
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IPC IPC(8): H01L31/107H01L31/18
CPCH01L31/107H01L31/022466H01L31/035281H01L27/1443H01L31/028H01L31/1804H01L31/182H01L31/1888
Inventor 尼古拉·阿法纳塞维奇·科洛博夫康斯坦丁·尤列维奇·西塔斯基维塔利·埃马努伊洛维奇·舒宾德米特里·阿列克谢耶维奇·舒沙科夫谢尔盖·维塔利维奇·博格达诺夫
Owner 蒂凡有限责任公司