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Controller storage device having the same and reading method thereof

A storage device and controller technology, applied in information storage, static memory, read-only memory, etc., can solve the problems of storage unit deterioration and seriousness of storage devices

Pending Publication Date: 2022-01-04
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there may be cases where the memory cells of the memory device have deteriorated so badly that correction cannot be performed by the ECC circuit

Method used

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  • Controller storage device having the same and reading method thereof
  • Controller storage device having the same and reading method thereof
  • Controller storage device having the same and reading method thereof

Examples

Experimental program
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Embodiment Construction

[0040] Hereinafter, with reference to the drawings exemplary embodiments of the inventive concept described. In the drawings, like reference numerals may refer to similar elements.

[0041] Controller according to an exemplary embodiment of the inventive concept, the method comprising reading a storage device controller, and the storage device may be on-chip search valley (OVS) detecting information reflecting an optimum read level to perform a read operation, thereby preventing deterioration in performance, while ensuring reliability. figure 1 10 illustrates a memory device according to an exemplary embodiment of the inventive concept. refer to figure 1 , Storage device 10 may comprise at least one nonvolatile memory device (the NVM (or more)) 100, and a controller (CNTL) 200.

[0042] At least one nonvolatile memory device 100 may store data. The nonvolatile memory device 100 may be a NAND flash memory, a vertical NAND flash memory, NOR flash memory, a resistive random access me...

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Abstract

A controller including: control pins for providing control signals to a nonvolatile memory; a buffer memory configured to store first to third tables; and an error correction code (ECC) circuit configured to correct an error in first data read from the nonvolatile memory according to a first read command, wherein the first table stores first offset information, the second table stores second offset information, and the third table stores third offset information, wherein the third offset information corresponds to a history read level and is determined by the first and second offset information, and when the error of the first data is uncorrectable, an on-chip valley search operation is performed by the nonvolatile memory according to a second read command, detection information of the on-chip valley search operation is received according to a specific command, and the second offset information which corresponds to the detection information is generated.

Description

[0001] Cross-reference for related applications [0002] The present application claims priority to Korean Patent Application No. 10-2020-0081240, filed on July 2, 2020, which is disclosed, filed on July 2, 2020, which is incorporated herein by reference. Technical field [0003] The present invention relates to a controller, including a storage device of a controller, and a reading method of a storage device. Background technique [0004] The error correction code (ECC) memory is a type of computer data storage that can detect and correct N-bit data corruption in the memory. Typically, the storage device uses the ECC circuit in the write operation to generate an ECC and correct an error of the data of the ECC in the read operation. However, there may be the following cases, where the storage unit of the storage device has deteriorated so serious, so that correcting is performed by the ECC circuit. In this case, the read retry operation can be performed using a readout method diff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26G11C7/10
CPCG11C16/26G11C7/1063G11C16/0483G06F3/0614G06F3/0658G06F3/0659G11C16/10G06F11/1048G11C16/08G11C16/30G11C29/18G11C29/42G11C29/44G11C2029/1202
Inventor 金真怜朴世桓朴一汉南尚完
Owner SAMSUNG ELECTRONICS CO LTD