Supercharge Your Innovation With Domain-Expert AI Agents!

Method for forming LLE overlay measurement mark based on diffraction and overlay measurement method

A measurement method, marking technology, applied in the direction of semiconductor/solid state device test/measurement, electrical components, electric solid state devices, etc.

Pending Publication Date: 2022-02-18
SEMICON MFG SOUTH CHINA CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the current DBO measurement technology still has deficiencies, therefore, it is necessary to provide more reliable and effective technical solutions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming LLE overlay measurement mark based on diffraction and overlay measurement method
  • Method for forming LLE overlay measurement mark based on diffraction and overlay measurement method
  • Method for forming LLE overlay measurement mark based on diffraction and overlay measurement method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The following description provides specific application scenarios and requirements of the application, with the purpose of enabling those skilled in the art to manufacture and use the contents of the application. Various local modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and embodiments without departing from the spirit and scope of the application. application. Thus, the application is not limited to the embodiments shown, but is to be accorded the widest scope consistent with the claims.

[0024] The technical solution of the present invention will be described in detail below in conjunction with the embodiments and the accompanying drawings.

[0025] DBO measurement technology is gradually replacing IBO measurement technology as the main measurement method for overlay accuracy. However, although the current DBO measurement technology can...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for forming an LLE overlay measurement mark based on diffraction and an overlay measurement method, and the method comprises the steps: providing a substrate, and forming a photoresist layer on the substrate; forming a plurality of first grooves in the photoresist layer; and forming a plurality of second grooves in the residual photoresist layer. According to the method for forming the LLE overlay measurement mark based on diffraction and the overlay measurement method, after the first groove is formed, the first groove is virtually filled, and then the second groove is formed, so that the design rule that the same process is forbidden to be continuously carried out twice on the same film layer is avoided, and a grating structure comprising a first groove and a second groove is formed in the photoresist layer, wherein the grating structure is used for carrying out DBO measurement.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a method for forming a diffraction-based LLE overlay measurement mark and an overlay measurement method. Background technique [0002] Traditionally, overlay is measured by using an imaging and image recognition-based overlay measurement technique (IBO, image-based overlay). As the CD size of lithographic patterns enters the process node of 28nm and below, due to the limitation of the imaging resolution limit, the traditional IBO measurement technology has gradually been unable to meet the requirements of the new process node for overlay measurement. Diffraction-based overlay measurement technology ( DBO (diffraction based overlay) is gradually becoming an important supplementary means of overlay measurement. [0003] DBO measurement technology originated from the method of optical measurement using scattering and diffraction. The overlay error is determined by ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/66H01L23/544
CPCH01L22/12H01L22/24H01L22/32
Inventor 张海杨晓松吴怡旻
Owner SEMICON MFG SOUTH CHINA CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com