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Precursor source arrangement and atomic layer deposition apparatus

An atomic layer deposition and precursor technology, applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of increasing the temperature gradient, difficult to maintain, etc., and achieve the effect of minimizing the condensation problem

Pending Publication Date: 2022-03-01
青岛四方思锐智能技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the precursor source requires ventilation, which further makes it difficult to maintain the increased temperature gradient

Method used

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  • Precursor source arrangement and atomic layer deposition apparatus
  • Precursor source arrangement and atomic layer deposition apparatus
  • Precursor source arrangement and atomic layer deposition apparatus

Examples

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Embodiment Construction

[0078] figure 1 A schematic diagram of an atomic layer deposition apparatus 1 for treating substrates according to the principle of the atomic layer deposition method is shown. The apparatus 1 comprises a vacuum chamber 8 and a reaction chamber 9 inside the vacuum chamber 8 . The substrate is processed inside the reaction chamber. In some embodiments, the vacuum chamber 8 and the reaction chamber 9 may form a single chamber.

[0079] The vacuum chamber 8 and the reaction chamber 9 are arranged inside a reactor compartment space 81 of a reactor compartment or reactor housing 80 surrounding the vacuum chamber 8 .

[0080] The device further comprises a process heater 4 arranged inside the vacuum chamber 8 for heating the reaction chamber 9 inside the vacuum chamber 8 . A process heater 4 is arranged outside the reaction chamber 9 for radiative heating of the reaction chamber 9 and the substrate during processing. The process heater 4 heats the reaction chamber 9 to the proce...

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Abstract

The invention relates to a precursor source arrangement (2) for an atomic layer deposition reactor and an atomic layer deposition apparatus. The precursor source arrangement (2) comprises a valve chamber (40) comprising one or more supply valves (72); and a precursor source chamber (20, 20 '), the precursor source chamber (20, 20') having a precursor container space (23) inside the precursor source chamber (20, 20 '). The precursor source chamber (20, 20 ') comprises a precursor source heat transfer element (22) arranged to heat the precursor container (30) inside the precursor container space (23). The valve chamber (40) comprises a valve chamber heat transfer element (50) arranged to heat one or more valves (72) inside the valve chamber (40), and the valve chamber heat transfer element (50) is arranged in heat transfer contact with the precursor source heat transfer element (22).

Description

technical field [0001] The present invention relates to precursor source arrangements, and more particularly to precursor source arrangements according to the preamble of claim 1 . The invention further relates to an atomic layer deposition apparatus, and more particularly to an atomic layer deposition apparatus according to the preamble of claim 20 . Background technique [0002] Atomic layer deposition methods utilize conventional precursor materials with low vapor pressures. Typically, such materials are solid precursor materials. However, some liquid precursors can also be considered as low vapor pressure materials. During the atomic layer deposition method, the precursors are supplied in the gas phase to the reaction chamber of the atomic layer deposition apparatus. Thus, a solid or liquid precursor material is evaporated and dosed in gaseous form into the reaction chamber to subject the surface of the substrate to the precursor material. In order to supply these lo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/448C23C16/52
CPCC23C16/45544C23C16/4485C23C16/45561C23C16/448C23C16/45527
Inventor P·索恩宁H·阿米诺夫P·J·索恩宁V·米库莱宁
Owner 青岛四方思锐智能技术有限公司