Method, device and equipment for testing bad storage unit of flash memory and storage medium

A storage unit and test method technology, applied in static memory, instruments, etc., can solve problems such as no technical solution and low test efficiency, and achieve the effect of reducing object base, reducing useless information, and simplifying judgment logic

Active Publication Date: 2022-04-01
上海芯存天下电子科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] If there is a bad memory unit in the chip, the test method of this test item involves two complete full-chip inspections and the test results need t

Method used

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  • Method, device and equipment for testing bad storage unit of flash memory and storage medium
  • Method, device and equipment for testing bad storage unit of flash memory and storage medium
  • Method, device and equipment for testing bad storage unit of flash memory and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] Start the bad memory unit test item test for a nor flash chip, first write all 0 data into the chip, and set a check digit at the same time, the check digit data is 0, and then use 8 bytes of data as the error checking unit from the beginning start address to start reading the data in the chip.

[0084]Verify that the read 8-byte data is all 0, if so, read and verify the data of the next 8-byte address; if not, it indicates that the storage unit corresponding to the 8-byte address is a bad storage unit , at this time, call the spare storage unit corresponding to the 8-byte address from the chip redundancy area to replace the bad storage unit in the form of mapping, and then check whether the 8-byte data in the replaced storage unit is all 0 , if yes, then read and verify the data of the next 8-byte address, if not, it indicates that the replaced storage unit is still a bad storage unit, at this time, a verification error signal is output, and the verification bit data i...

Embodiment 2

[0088] Start the bad memory unit test item test for a nor flash chip, first write all 0 data into the chip, and set a check digit at the same time, the check digit data is 0, and then use 8 bytes of data as the error checking unit from the beginning start address to start reading the data in the chip.

[0089] Verify that the read 8-byte data is all 0, if so, read and verify the data of the next 8-byte address; if not, it indicates that the storage unit corresponding to the 8-byte address is a bad storage unit , at this time, call the spare storage unit corresponding to the 8-byte address from the chip redundancy area to replace the bad storage unit in the form of mapping, and then check whether the 8-byte data in the replaced storage unit is all 0 , if yes, then read and verify the data of the next 8-byte address, if not, it indicates that the replaced storage unit is still a bad storage unit, at this time, a verification error signal is output, and the verification bit data ...

Embodiment 3

[0093] Start the bad memory unit test item test for a nor flash chip, first write all 0 data into the chip, and set a check digit at the same time, the check digit data is 0, and then use 8 bytes of data as the error checking unit from the beginning start address to start reading the data in the chip.

[0094] Verify that the read 8-byte data is all 0, if so, read and verify the data of the next 8-byte address; if not, it indicates that the storage unit corresponding to the 8-byte address is a bad storage unit , record the address of the bad storage unit, and then read and verify the data of the next 8-byte address; after the data reading and verification of the last 8-byte address of the chip is completed, the bad memory unit with the recorded address is read one by one. The storage unit performs the following operations: call the spare storage unit corresponding to the 8-byte address from the redundant area of ​​the chip to replace the bad storage unit in the form of mapping...

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PUM

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Abstract

The invention relates to the technical field of chips, and particularly discloses a bad storage unit testing method, device and equipment of a flash memory and a storage medium, and the method comprises the following steps: carrying out full-chip data debugging processing on a chip, and obtaining a bad storage unit; replacing the bad storage unit with the standby storage unit; performing secondary debugging processing on the replaced storage unit to obtain a debugging result; recording the error checking result on a check bit; obtaining a test result according to a debugging result recorded by the check bit; according to the method, the bad storage unit obtained according to full-chip data debugging processing is replaced, secondary debugging processing is only carried out on the replaced storage unit, the object cardinal number of repeated debugging is effectively reduced, then the testing efficiency is improved, meanwhile, the check bit is used for recording the testing result, and the testing efficiency is improved. Useless information in the test result is effectively reduced, and the judgment logic of the test result is simplified.

Description

technical field [0001] The present application relates to the field of chip technology, in particular, to a method, device, equipment and storage medium for testing bad storage units of flash memory. Background technique [0002] As a kind of non-volatile memory, nor flash needs to go through multiple testing procedures after production, such as testing on unmarked silicon chips, testing on packaged chips, etc., to screen out chips with qualified performance. [0003] The chip test program involves the test of the bad memory unit test item. The test item test process includes: writing data to the whole chip, and then checking the whole chip by reading data to confirm whether there is a bad memory unit in the chip. If there is no bad memory unit, the chip passes the test item; if there is a bad memory unit, after the bad memory unit is replaced, the full-chip inspection is performed again by reading data, and if there is still a bad memory unit, the chip is scrapped. [0004...

Claims

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Application Information

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IPC IPC(8): G11C29/04G11C29/06G11C29/08G11C29/56
Inventor 王文静王明李佳泽
Owner 上海芯存天下电子科技有限公司
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