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High-reliability low-defect semiconductor light-emitting device and preparation method thereof
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A technology for light-emitting devices and semiconductors, which is applied to semiconductor lasers, laser components, structures of optical waveguide semiconductors, etc., can solve the problems of high process control cost, difficulty in taking into account reliability, etc., and achieves reduced technical difficulty, reduced optical catastrophe damage, Reduce the effect of coating shading
Active Publication Date: 2022-04-12
SUZHOU EVERBRIGHT PHOTONICS +1
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[0004] Therefore, the technical problem to be solved by the present invention is to overcome the problem of high reliability and low process control cost in the prior art, so as to provide a high-reliability and low-defect semiconductor light-emitting device and its preparation method
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Embodiment 1
[0042] An embodiment of the present invention provides a high-reliability and low-defect semiconductor light-emitting device, refer to figure 1 ,include:
[0044] an active layer 130 located on the semiconductor substrate layer;
[0045] A doped semiconductor contact layer 160 located on a side of the active layer 130 away from the semiconductor substrate layer 100, the doped semiconductor contact layer 160 comprising a first region and an edge region surrounding the first region;
[0046] a protection layer 170 located on a side of the edge region of the doped semiconductor contact layer 160 away from the active layer 130;
[0047] The front electrode layer 190 is located on the side of the first region away from the active layer 130 , and the upper surface of the front electrode layer 190 on the first region is lower than the upper surface of the protective layer 170 .
[0048] In this embodiment, the protective layer 170 is use...
Embodiment 2
[0075] This embodiment provides a method for manufacturing a high-reliability and low-defect semiconductor light-emitting device. Refer to figure 1 ,include:
[0076] S1: providing a semiconductor substrate layer;
[0077] S2: forming an active layer on the semiconductor substrate layer;
[0078] S3: forming a doped semiconductor contact layer on a side of the active layer away from the semiconductor substrate layer, the doped semiconductor contact layer including a first region and an edge region surrounding the first region;
[0079] S4: forming a protective layer on the side of the edge region of the doped semiconductor contact layer away from the active layer;
[0080] S5: forming a front electrode layer on a side of the first region away from the active layer, the upper surface of the front electrode layer on the first region is lower than the upper surface of the protective layer.
[0081] refer to figure 2 , providing a semiconductor substrate layer 100; forming a ...
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Abstract
The invention discloses a high-reliability low-defect semiconductor light-emitting device and a preparation method thereof. The high-reliability low-defect semiconductor light-emitting device comprises a semiconductor substrate layer; the active layer is positioned on the semiconductor substrate layer; the doped semiconductor contact layer is located on one side, away from the semiconductor substrate layer, of the active layer and comprises a first region and an edge region surrounding the first region; the protection layer is positioned on one side, deviating from the active layer, of the edge region of the doped semiconductor contact layer; the front electrode layer is located on the side, away from the active layer, of the first area, and the upper surface of the front electrode layer on the first area is lower than the upper surface of the protective layer. The semiconductor light-emitting device is high in reliability and low in process control cost.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high-reliability and low-defect semiconductor light-emitting device and a preparation method thereof. Background technique [0002] A semiconductor light-emitting device is a device that produces stimulated emission using a certain semiconductor material as a working substance. Between the energy band of the material and the energy level of the impurity (acceptor or donor), the particle number inversion of the non-equilibrium carrier is realized. When a large number of electrons and holes in the particle number inversion state recombine, stimulated emission occurs Because of its small size and high electro-optic conversion efficiency, semiconductor light-emitting devices are widely used. [0003] The existing defect optimization technology for the surface of semiconductor light-emitting devices is difficult to take into account the problems of improving reliability and ...
Claims
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