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A high-reliability and low-defect semiconductor light-emitting device and its preparation method
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A light-emitting device and semiconductor technology, which is applied in the direction of semiconductor lasers, laser components, and optical waveguide semiconductor structures, can solve problems such as difficulty in taking into account reliability and high process control costs, and reduce optical catastrophe damage and technical difficulty. easy-to-achieve effects
Active Publication Date: 2022-05-31
SUZHOU EVERBRIGHT PHOTONICS CO LTD +1
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[0004] Therefore, the technical problem to be solved by the present invention is to overcome the problem of high reliability and low process control cost in the prior art, so as to provide a high-reliability and low-defect semiconductor light-emitting device and its preparation method
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Embodiment 1
[0042] An embodiment of the present invention provides a high-reliability and low-defect semiconductor light-emitting device, with reference to FIG. 1, including:
[0043] The semiconductor substrate layer 100;
[0044] an active layer 130 on the semiconductor substrate layer;
[0045] The doped semiconductor contact layer 160 on the side of the active layer 130 away from the semiconductor substrate layer 100, so
[0046] a protective layer 170 on the side of the edge region of the doped semiconductor contact layer 160 away from the active layer 130;
[0047] The front electrode layer 190 is located on the side of the first region away from the active layer 130, and the positive electrode on the first region is
[0048] In this embodiment, the protective layer 170 is used to elevate the edge region of the doped semiconductor contact layer 160, so that the
[0049] In one embodiment, the upper surface of the protective layer 170 and the front electrode located on the first region
...
Embodiment 2
[0075] The present embodiment provides a method for preparing a high-reliability and low-defect semiconductor light-emitting device, with reference to FIG. 1, including:
[0079] S4: forming a protective layer on the side of the edge region of the doped semiconductor contact layer away from the active layer;
[0081] Referring to FIG. 2, a semiconductor substrate layer 100 is provided; a lower confinement layer 110 is formed on the semiconductor substrate layer 100; at the lower limit
[0082] In the present embodiment, the step of forming the doped semiconductor contact layer 160 includes: deviating from the active layer 130
[0083] In other embodiments, the doped semiconductor contact layer is a single-layer structure.
[0084] In step S4, a protective layer is formed on the side of the edge region of the doped semiconductor contact layer away from the active layer
[0085] The initial protective layer 17 is a single-layer structure or a multi-layer structure.
[0086] When the ...
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Abstract
A high-reliability and low-defect semiconductor light-emitting device and its preparation method. The high-reliability and low-defect semiconductor light-emitting device includes: a semiconductor substrate layer; an active layer located on the semiconductor substrate layer; A doped semiconductor contact layer on one side of the semiconductor substrate layer, the doped semiconductor contact layer includes a first region and an edge region surrounding the first region; the edge region located at the doped semiconductor contact layer is away from the active The protective layer on one side of the layer; the front electrode layer, located on the side of the first region away from the active layer, the upper surface of the front electrode layer on the first region is lower than the upper surface of the protective layer. The semiconductor light emitting device combines high reliability and reduced process control cost.
Description
A high-reliability and low-defect semiconductor light-emitting device and preparation method thereof technical field The present invention relates to semiconductor technology field, be specifically related to a kind of high reliability and low defect semiconductor light-emitting device and its Preparation. Background technique Semiconductor light-emitting device is a device that produces stimulated emission with a certain semiconductor material as a working substance. Its working principle is: through a certain excitation method, between the energy band (conduction band and valence band) of the semiconductor material, or half Between the energy band of the conductor material and the energy level of the impurity (acceptor or donor), the population inversion of non-equilibrium carriers is realized. When a large number of electrons and holes in the state of particle number inversion recombine, stimulated emission occurs. Small size and high electro-optical conversion ...
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