Semiconductor layer doping method and thin-film semiconductor device and its manufacturing method

Abstract

A lower concentration impurity diffusion region can be formed under excellent control, even when a low heat-resistant substrate is used. At the time of doping a semiconductor layer, a mask such as sidewalls (24) where an energy beam passes through, is formed on a part of a surface of a semiconductor layer (21), dopant ions (25) are adsorbed on the surface of the semiconductor layer (21) except a region in which the mask is formed, and an energy beam EBL is irradiated onto the semiconductor layer (21) having the formed mask to introduce the dopant ions into the semiconductor layer (21). In the lower part of the mask such sidewalls (24), diffusion in transverse direction occurs and lower concentration impurity diffusion regions can be formed in excellent reproducibility under excellent control.

Description

technical field [0001] The present invention relates to a method of doping a semiconductor layer, a method of manufacturing a thin film semiconductor device and a thin film semiconductor device, more specifically, a doping method utilizing a crystallized semiconductor layer by excimer laser annealing to manufacture a thin film transistor like A method for a thin film semiconductor device, a thin film semiconductor device, wherein a semiconductor layer made of, for example, polysilicon material serves as a channel. Background technique [0002] With the development of the advanced information age, the importance of input and output devices is rapidly increasing, and advanced high-function devices are required. Also, the popularity of personal digital assistants has been remarkable in recent years, and therefore, the technology for producing TFTs on plastic substrates that are lightweight, flexible, and non-destructive is more desirable than conventional glass substrates. Und...

AI Technical Summary

Problems solved by technology

Although ion doping and plasma doping are beneficial for the formation of larger area types, these processes have the problem that the film can contain a large amount of hydrogen, which may be crystallized by excimer laser annealing (ELA: ExcimerLaser Aneal) damage or destroy the film layer during hydrogenation, and it is difficult to perform cryogenic treatment on the used plastic plate at the required dehydrogenation temperature (400°C)

Therefore, there are significant problems of grain boundary leakage and hot electrons compared with processes using furnace annealing and lamp annealing where solid phase diffusion can occur

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