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Photographic corrosion mfg method for mixing chromium-free film and phase transition mixed type photo mask, and photographic corrosion manufacturing method employing the mask

A manufacturing method and a technology of a photomask, which are applied to the photolithographic process of the pattern surface, the photolithographic process exposure device, and the original for photomechanical processing, etc., can solve the problem of complex photo-etching technology, high production cost, time-consuming, etc. problem, to achieve the effects of simple drawing and production, high critical dimension uniformity, high resolution and critical dimension uniformity

Inactive Publication Date: 2005-12-07
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Although the resolution and critical dimension uniformity can be improved with the existing photoetching technology of alternating phase transfer photomask, it is necessary to use double exposure to be fully imaged.
Therefore, the existing alternating phase transfer photomask photoetching technology is relatively complicated and time-consuming
In addition, since the existing alternate phase-transfer photomask photo-etching technology needs to make two photomasks for matching, not only the drawing process of the photomask design is more complicated, but also the manufacturing cost is relatively high

Method used

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  • Photographic corrosion mfg method for mixing chromium-free film and phase transition mixed type photo mask, and photographic corrosion manufacturing method employing the mask
  • Photographic corrosion mfg method for mixing chromium-free film and phase transition mixed type photo mask, and photographic corrosion manufacturing method employing the mask
  • Photographic corrosion mfg method for mixing chromium-free film and phase transition mixed type photo mask, and photographic corrosion manufacturing method employing the mask

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Embodiment Construction

[0042] figure 1 , which is shown as a top view of the designed components; Figure 4 As shown, it is a top view of a photomask design using a photo-etching manufacturing method using a chromium-free film and a phase transfer hybrid photomask according to a preferred embodiment of the present invention.

[0043] Please refer to figure 1 , figure 1 The device designed in includes a gate structure 102 on a substrate 100 and doped regions 104 , 106 in the substrate 100 on both sides of the gate structure 102 . Wherein, the critical dimension of the gate structure 102 corresponding to the doped regions 104 and 106 must be controlled.

[0044]The photomask design of the photo-etching manufacturing method using phase transfer photomask technology of the present invention is as follows Figure 4 shown. Formed on a transparent substrate 400 corresponding to figure 1 A gate pattern 402 of the gate structure 102 in FIG. Wherein, the gate pattern 402 corresponds to figure 1 at the...

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Abstract

The invention is a photo-corrosion making method using non-chromic film and phase transfer composite photo mask, firstly providing an photo mask developed with a grid design, a 180ophase transfer layer developed in the key size place of the grid design, and then carrying out a exposure making course to transfer the grid design to a photic anti-corrosion agent layer.

Description

technical field [0001] The invention relates to a photo-etching manufacturing method, and in particular to a photo-etching manufacturing method using a chromium-free film and a phase-transfer hybrid photomask. Background technique [0002] As the integration of integrated circuits increases, the size of components of the entire integrated circuit must also be reduced accordingly. The most important method in the semiconductor manufacturing process is the photo-etching manufacturing method, which is related to the structure of Metal-Oxide-Semiconductor (MOS) components, such as: the pattern of each layer of thin film (Pattern), and doping The area with impurities (Dopants) is determined by the step of photo-etching. In order to reduce the size of components, some methods to improve the resolution of photomasks have been continuously proposed, such as Phase Shift Mask (Phase Shift Mask, PSM) photo-etching technology and Optical Proximity Correction (Optical Proximity Correcti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/56G03F7/20G03F9/00H01L21/027
Inventor 林金隆杨春晖洪文田
Owner UNITED MICROELECTRONICS CORP