Heat shield assembly for crystal puller
A crystal puller and thermal shielding technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc.
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example 1
[0034] Ingots with a diameter of approximately 200 mm are grown in a crystal puller with a heat shield that follows the figure 2 The heat shielding device of the prior art or the first ( figure 1 ) and the second ( image 3 ) The thermal shielding device 50, 150 of the embodiment constitutes. The maximum pull rate for each example was determined by measuring the fastest pull rate without twisting the growing rod. When the heat shielding devices of the first and second embodiments of the present invention are used, the maximum pull-out rates are 0.90 mm / min and 0.80 mm / min, respectively. This is comparable to the maximum pull-out rate of about 0.65 mm / min with the heat shield A of the prior art.
[0035] Figure 4 A third embodiment of the present invention is shown in which the heat shield 250 is further structured to achieve good GOI and reduce or prevent OISF while still enabling pullout rates higher than the maximum associated with prior art heat shield A. pull rate. ...
example 2
[0041] In the crystal puller that has heat-shielding device, grow out the crystal bar that diameter is about 200mm, and this heat-shielding device is respectively according to the third of the present invention ( Figure 4 ) and fourth ( Figure 5 ) embodiment of the thermal shielding device 250 and 350 constitute. The maximum pull rate for each example was determined by measuring the fastest pull rate without twisting the growing rod. When using the heat shielding device 250 of the third embodiment, the maximum pull-out rate is about 0.70 mm / min. For the heat shield 350 of the fourth embodiment, the maximum pull-out rate is about 0.80 mm / min. These pull-out rates are comparable to the maximum pull-out rate of about 0.65 mm / min using the prior art heat shield A described above with respect to Example 1 .
example 3
[0043] A crystal ingot with a diameter of about 200 mm is grown in a crystal puller equipped with a heat shielding device, which is composed of the heat shielding device 350 according to the fourth embodiment of the present invention and the heat shielding device A according to the prior art. OISF is determined by identifying a ring of defects in the rod caused by oxygen deposits and measuring the number of defects in a given area. Crystals grown using prior art heat shield A had an OISF ring located approximately 5 mm to 10 mm radially inward from the perimeter of the rod and had an oxygen deposit density of 1000 / cm 2 . Crystals grown using the heat shield 350 of the fourth embodiment have no measurable defect rings and their total defect density is less than 1 / cm 2 .
[0044] In addition, the axial temperature gradient of the rod was measured in the required temperature range of 1150°C to 1050°C. The axial temperature gradient within this range for the rods grown using th...
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