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Method for making nano device

A nano-device and marking technology, applied in the direction of nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve problems such as long exposure time

Inactive Publication Date: 2006-09-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the electron beam exposure system usually uses a thinner beam spot for ultra-fine graphic scanning exposure, the higher the graphic accuracy requirement, the finer the beam spot required for drawing the graphic, and the smaller the corresponding beam current density. Sensitivity conditions require longer exposure times

Method used

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  • Method for making nano device
  • Method for making nano device
  • Method for making nano device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0029] 1. Preparation of the overlay detection mark mask for electron beam and optical exposure machines: When designing the detection mark pattern, consider the marks for electron beam exposure machine detection and contact or projection optical exposure machines at the same time. figure 1 , 2 respectively give the electron beam direct writing lithography chip and contact optical alignment mark and projection optical exposure machine ASM silicon wafer mark and mesa mask mark. A mask with these marks is produced by an electron beam lithography machine to ensure positioning accuracy.

[0030] 2. Use an electron beam exposure machine to expose and make or an optical exposure machine to realize metal bump marks or etching marks for substrate grooves on the chip.

[0031] a. Electron beam exposure machine exposes to make metal raised marks.

[0032] (1) Simultaneously input the marks for electron beam and contact exposure machine (as shown in the figure above) and the fine parts ...

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PUM

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Abstract

The present invention relates to a method for making nano device. The method includes the following steps: preparing overlay detection mark mask plate of electron-beam and optical exposure machine; applying PMMA resist on substrate, prebaking, electron-beam exposure, developing MIBK:IPA=1:3, time is 1 min, fixing for 30 sec. in IPA solution, evaporation or sputtering metal, stripping in acetone solution, applying secondary electron-beam resist, thickness is 200-250 nm, prebaking, utilizing the method for detecting back scattered electron of mark edge by using electron-beam to detect whole mark on the substrate and small mark of every die, correcting according to measured value, secondary electron-beam exposure, accelerating voltage 50KV, dose 500 u C / sq.cm, beam current 100 Pa, developing MIBK:IPA=1:3, time is 1 min, fixing for 30 sec in IPA solution, optically exposing other pattern for making device, finally forming nano-grade device.

Description

technical field [0001] The invention provides a method for manufacturing a nanometer device. Background technique [0002] Due to its high efficiency, optical exposure is the mainstream technology of integrated circuit manufacturing at present, but the resolution of optical exposure is limited by the exposure wavelength and it is difficult to achieve nanoscale resolution. Electron beam exposure has a very high resolution, and the resolution of high-performance electron beam exposure machines can reach several nanometers. However, since the electron beam exposure system usually uses a thinner beam spot for ultra-fine graphic scanning exposure, the higher the graphic accuracy requirement, the finer the beam spot required for drawing the graphic, and the smaller the corresponding beam current density. The higher the sensitivity, the longer the exposure time is required. The beam spot size can range from micrometer to nanometer, and the beam diameter spans a thousand times. Th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00
Inventor 刘明陈宝钦徐秋霞郑英葵
Owner SEMICON MFG INT (SHANGHAI) CORP