Cleaning method for semiconductor

Abstract

The method includes following steps: a semiconductor wafer is provided; a first silicon oxide layer is formed on the semiconductor wafer; a floating gate layer is formed on the first silicon oxide layer; a second silicon oxide layer is formed on the floating gate layer; the first silicon oxide layer, floating gate layer and second silicon dioxide layer are etched to form gate structure, the second silicon oxide layer is taken as dielectric layer; deionized water containing ozone is used to wash the semiconductor wafer with gate structure; next the first cleaning liquid is used to wash the above semiconductor wafer; finally the second cleaning liquid is used to wash the semiconductor wafer.

Description

technical field [0001] The present invention relates to a method for cleaning silicon wafers, and in particular to a method for cleaning wafers with deionized water containing ozone. Background technique [0002] In the semiconductor manufacturing process, pollutants such as polymers, photoresists, or insoluble organic substances may exist and accumulate on the semiconductor wafer, which will be detrimental to the operation of semiconductor components. FIG. 1 is a schematic cross-sectional view of a semiconductor device, and pollutants are accumulated on the semiconductor device during the manufacturing process. [0003] Referring to FIG. 1, the semiconductor device 100 includes a semiconductor substrate 102 and a gate structure (not labeled) of a flash memory cell (not shown). The gate structure includes a tunnel oxide layer 104, a floating gate 106 and Dielectric layer 108 . Wherein, the material of the floating gate 106 includes polysilicon or silicon nitride, and the m...

AI Technical Summary

Problems solved by technology

[0010] Although the RCA cleaning process has been widely used in semiconductor manufacturing processes, with the continuous improvement of semiconductor manufacturing technology and the emergence of various new materials, this cleaning process can no longer meet the needs of various semiconductor manufacturing processes

For example, for metal materials or low dielectric constant (Low-K) materials used in today's semiconductor components (such as flash memory), the use of cleaning solutions in the RCA cleaning process may cause corrosion question

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