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Method and device of monitering ion concentration in etching cavity body in sputtering etching process

A technology of ion concentration and monitoring devices, which is applied in the direction of discharge tubes, electrical components, circuits, etc., and can solve problems such as poor yield of wafers and unmonitored DC bias

Inactive Publication Date: 2003-07-16
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the past, the industry did not monitor the DC bias voltage in the process, so that when the DC bias voltage in the process fluctuated drastically, it resulted in wafers with poor yield

Method used

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  • Method and device of monitering ion concentration in etching cavity body in sputtering etching process
  • Method and device of monitering ion concentration in etching cavity body in sputtering etching process
  • Method and device of monitering ion concentration in etching cavity body in sputtering etching process

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Embodiment Construction

[0022] figure 1 It is a schematic diagram of the relationship between a method and a device for monitoring ion concentration in an etching chamber in a sputtering etching process according to a preferred embodiment of the present invention, such as figure 1 As shown, the device 120 for monitoring the concentration of ions in the etching chamber during the sputtering etching process is used to read the DC bias voltage generated by the etching chamber 110 in real time, output the DC bias voltage, and then output the DC bias voltage The pressure is compared with a specific range value, judged and output an indication signal that represents the exceeding of a specific range. Referring to this indication signal, the parameters of the pre-clearing process in the sputtering etching process can be adjusted to achieve stable control of the ion concentration in the etching chamber, so that the ion concentration can be varied within a certain range, and a wafer with fewer defects can be ...

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PUM

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Abstract

A method and equipment for controlling the ion concentration in etching cavity in sputter etching technology features that the DC bias voltage of pre-cleaning step in sputter etching technology is read-out and the technological parameters for said pre-cleaning step are regulated according to said DC bias voltage value for making the DC bias voltage vary in a certain range to control the ion concentration in etching cavity.

Description

technical field [0001] The present invention relates to a sputter etch process, and in particular to a method and device for monitoring ion concentration in an etching chamber during the sputter etch process. Background technique [0002] During the wafer output process, in order to reduce and stabilize the resistance value of the wire contact, a sputter etching process must be applied to remove the natural oxide layer generated on the wafer surface. In this process, it must be composed of low-frequency radio frequency (400KHZ) plasma. In addition, a DC bias voltage is required to balance the electron flow and ion flow. The ions are successfully accelerated to the wafer surface by the DC bias voltage to form sputtering etching. Effect. DC bias is a negative voltage established in the reaction chamber, and the parameters that affect the DC bias are mainly high-frequency radio frequency (13.56MHz) power and pressure, and even the system hardware structure will affect the perf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/04H01J37/305H01J37/34
Inventor 林建家周世良徐国维
Owner MACRONIX INT CO LTD