Field electrode metal semiconductor field effect transistor

Abstract

A planar MESFET transistor includes a plurality of FET elements. Each FET element includes a doped planar channel, and source and drain coupled to the ends of the channel. A gate conductor extends over a portion of the channel at a location lying between the source and drain, a first predetermined distance from the drain. A field plate is connected to the gate conductor, and extends toward the drain a second predetermined distance, isolated from the channel except at its gate conductor connection by a dielectric material.

Description

technical field [0001] The present invention relates generally to semiconductor devices and, more particularly, to gallium arsenide (GaAs) field effect transistors (FETs). Background technique [0002] GaAs metal-semiconductor field-effect transistors (MESFETs) are existing devices used to provide microwave frequency amplification, high-speed digital switching, and various other functions. The use of microwave devices in satellite-based and wireless communications has grown rapidly in recent years. In these applications, there is a very high power capacity per unit transistor surface area, expressed in W / mm 2 Said that MESFETs have a vast market. Due to the increased power capacity or output of the transistor, a single transistor is able to deliver the power provided by multiple transistors in previous generations, which provides cost, volume and weight savings. The greater the power capacity of a transistor, the wider its potential applications and the larger its potenti...

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Problems solved by technology

Although it is effective for increasing the breakdown voltage, the additional length of the channel (in the direction of source-drain conduction) introduces additional resistance into the source-drain path, and this additional resistance, in turn, tends to limit the on-state or maximum current

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