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Method for toolmatching and troubleshooting a plasma processing system

一种处理系统、一等离子的技术，应用在电路、放电管、电气元件等方向，能够解决不能产生相同的结果、不足力矩要求、不当硬件组配等问题

Inactive Publication Date: 2010-04-14
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Plasma processing chambers may not produce the same results over time due to chamber wear and polymer deposition
Other issues such as improper hardware configuration and insufficient torque requirements may also cause inconsistent throughput of the plasma processing chamber

Method used

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  • Method for toolmatching and troubleshooting a plasma processing system
  • Method for toolmatching and troubleshooting a plasma processing system
  • Method for toolmatching and troubleshooting a plasma processing system

Examples

Experimental program
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Embodiment Construction

[0018] Embodiments of the invention are described herein with reference to a plasma processing system. Those skilled in the art will appreciate that the following detailed description of the invention is illustrative only and not intended to be limiting in any sense. Other embodiments of the present invention can be readily conceived by those skilled in the art having the benefit of this description. Reference will now be made in detail to the embodiments of the invention illustrated in the accompanying drawings. The same reference numbers will be used throughout the drawings and the following detailed description to refer to the same or like parts.

[0019] In the interest of clarity, not all common features of these implementations are shown and described herein. Of course, it should be understood that in the development of any actual implementation, a myriad of implementation-specific decisions must be made to achieve the developer's specific goals, such as compliance wit...

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PUM

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Abstract

A method tests a plasma processing system having a chamber, an RF power source, and a matching network. An RF power signal is generated from the RF power source to the chamber without igniting any plasma within the chamber. The voltage of the RF power signal, the current of the RF power signal, and the phase of the RF power signal, received by the chamber is measured while holding other parametersaffecting the chamber constant. A value representative of an impedance of the chamber is computed based on the voltage, the current, and the phase. The value is then compared with a reference value todetermine any defects in the plasma processing system. The reference value is representative of the impedance of a defect-free chamber.

Description

[0001] related application [0002] This patent application claims the benefit of commonly assigned US Provisional Patent No. 60 / 414,108, filed September 26, 2002 in the name of inventors Armen Avoyan and Seyed JafarJafarian-Tehrani. technical field [0003] The present invention relates to the manufacture of an electronic device. More particularly, the present invention relates to a method and system for calibrating a plasma processing system. Background technique [0004] Processes using ionized gases, such as plasma etching and reactive ion etching, are gaining in importance, especially in the manufacture of semiconductor devices. Of particular interest are devices for etching processes. Capacitive and inductively coupled plasma etch systems can be used in the processing and fabrication of semiconductor devices. A plasma processing system generally includes a plasma reactor with a plasma chamber therein. An RF power generator provides RF power to the plasma chamber. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32935H01J37/32082H01J37/304H01J37/3023
Inventor 阿芒·阿沃扬赛义德·加法尔·加法利安-德黑兰尼
Owner LAM RES CORP
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