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Nonvolatile memory device using resistor having multiple resistance states and method of operating the same

A storage device, non-volatile technology, applied in the field of non-volatile storage devices, can solve problems such as difficulty in using multiple states

Inactive Publication Date: 2006-06-21
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to utilize multiple states in one memory device

Method used

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  • Nonvolatile memory device using resistor having multiple resistance states and method of operating the same
  • Nonvolatile memory device using resistor having multiple resistance states and method of operating the same
  • Nonvolatile memory device using resistor having multiple resistance states and method of operating the same

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Embodiment Construction

[0025] The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown

[0026] Example.

[0027] figure 1 is a diagram of a resistor region of a nonvolatile memory device employing resistors having multiple resistance states according to an embodiment of the present invention. refer to figure 1 , the resistor of the memory device includes a lower substrate 10 , a lower electrode 11 , a resistor 12 and an upper electrode 13 stacked in sequence.

[0028] figure 1 The lower substrate 10 can be a transistor structure or a diode structure that can perform a switching function. The transistor structure will be described later. The lower electrode 11 and the upper electrode 13 may be made of electrode materials used in general semiconductor memory devices.

[0029] Here, the resistor 12 is a characteristic part of the nonvolatile memory device of the present invention and functions as...

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Abstract

A nonvolatile memory device employing a resistor having multiple resistance states and a method of operating the same are provided. Memory devices include switching devices and resistors. A resistor is electrically connected to the switching device and has a reset resistance state and at least two or more set resistance states.

Description

technical field [0001] The present invention relates to a nonvolatile memory device employing resistors having multiple resistance states and a method of operating the same. Background technique [0002] In a semiconductor memory device, the degree of integration determined by the number of memory cells per unit area can be high, the operating speed can be very fast, and the memory device can work in a low-power environment. Therefore, a great deal of research on these problems has been conducted all over the world, and as a result of these researches, memory devices based on various operating principles have been developed. [0003] Generally, a semiconductor memory device includes many memory cells connected to each other in a circuit manner. A representative memory device may be a dynamic random access memory (DRAM). A unit memory cell of DRAM generally includes a switch and a capacitor, and has the advantages of high integration and high speed. However, DRAM is a vola...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/105
CPCG11C11/5678G11C11/5685G11C13/0004G11C13/0007G11C2213/31G11C2213/32G11C2213/79H10N70/8828
Inventor 徐顺爱柳寅儆朴允童李明宰
Owner SAMSUNG ELECTRONICS CO LTD