Semiconductor light-emitting device

Abstract

A semiconductor light emitting device is provided. In a traditional semiconductor light emitting device wherein a semiconductor light emitting element fixed on the metal bottom surface in concave of the substrate by bond such as conductive bond is installed by sealing resin, optical property degradation and poor electrical property is generated by the thermal stress of sealing resin under a high temperature packaging environment and a use environment of a large temperature change, and an interfacial delamination between metal bottom surface and the bond. The invention provides a semiconductorlight emitting device with a high reliability which prevents optical property degradation and poor electrical property by partially removing the metal pattern on the inner surface of the concave to expose the insulator on the bottom from the sealing resin, and forming an interface that is of strong binding force with insulator and sealing resin. As a result, it reduces an impact of thermal stressof sealing resin under a high temperature packaging environment and a use environment of a large temperature change which causes the interfacial delamination between the metal bottom surface and the bond.

Description

technical field [0001] The present invention relates to a semiconductor light-emitting device, in particular to a semiconductor light-emitting device in which a semiconductor light-emitting element is mounted inside a recess provided on a substrate and the semiconductor light-emitting element is resin-sealed. Background technique [0002] For semiconductor light-emitting devices, such as Figure 7 and Figure 8 device with the structure shown. Figure 7 is a top view, Figure 8 Yes Figure 7 The A-A section diagram. A pair of circuit patterns 51a, 51b are formed at opposite end portions on the front side of the insulator 50, and each circuit pattern 51a, 51b is formed to wrap around from the edge to the back side through the side surface. In addition, a concave portion 52 is provided at a substantially central portion of the surface side of the insulator 50, and a circuit pattern is formed on the entire surface of the inner bottom surface 53 and the entire inner peripheral...

AI Technical Summary

Problems solved by technology

Then, due to the detached translucent resin, the conductive adhesive and the semiconductor light-emitting element are lifted to the upper side of the circuit pattern, and the conductive adhesive is peeled from the circuit pattern, resulting in deterioration of optical characteristics and Possibility of poor electrical characteristics

[0008] Moreover, even after the semiconductor light emitting device is mounted on the component mounting substrate, due to the temperature change caused by the repeated turning on and off of the semiconductor light emitting device, the translucent resin repeatedly expands and shrinks, and the resin stress at this time reaches the same level as above. role, there is a possibility of deterioration of optical characteristics and poor electrical characteristics

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