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Light-emitting device and producing method thereof

A light-emitting device and electrode technology, applied in lighting devices, electroluminescent light sources, fluorescence, etc., can solve problems such as the impossibility of obtaining high-brightness light and low-efficiency light-emitting devices

Inactive Publication Date: 2007-04-04
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, it is impossible to obtain high-brightness light even with an electric field of the same magnitude acting on the electrodes, resulting in an inefficient light-emitting device relative to energy consumption.

Method used

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  • Light-emitting device and producing method thereof
  • Light-emitting device and producing method thereof
  • Light-emitting device and producing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0109] First, as shown in FIG. 1, a pair of series electrodes 2a, 2b were formed on a first glass substrate 1 having a thickness of 1.1 mm with a slit of 100 μm between facing electrodes. The electrodes 2a and 2b in this embodiment are made of hardened silver electrodes respectively, and are formed by screen printing using a mixture of silver particles and glass powder with an average particle diameter of 500nm, which is dispersed in organic Adhesive (produced by Japan Dexa Co., Ltd.).

[0110]A method of manufacturing the light emitting device in this embodiment will be described with reference to FIGS. 2-8. First, as shown in FIG. 2, a silver paste 3 is printed on a glass substrate 1. As shown in FIG. In this printing process, a metal mask (20 μm in thickness) having a pattern of slits (18 μm in width) used in silver paste printing was used. Next, the printed silver paste is fired at a temperature of 550° C. to obtain the silver electrode 4 shown in FIG. 3 which shrinks af...

Embodiment 2

[0116] First, as shown in FIG. 1 , a pair of series electrodes 2 a , 2 b were formed on a first glass substrate 1 having a thickness of 1.1 mm with a slit between opposing electrodes of 40 μm. The electrodes 2a, 2b in this embodiment are each made of a baked silver electrode in which a mixture of silver particles with an average particle diameter of 500 nm and glass frit is dispersed in an organic binder.

[0117] A method of forming a silver electrode in this embodiment will be described with reference to FIGS. 9-12. First, as shown in FIG. 9 , a protective film is formed on a glass substrate 1 . Next, the protective film 10 was processed to be patterned with slits having a width of 3 μm, thus producing a mask formed of the protective pattern as shown in FIG. 10 . Next, as shown in FIG. 11, the above-mentioned silver paste was printed with a squeegee to bury the slits thus formed. The silver paste is then dried and preliminarily hardened at a temperature of 150°C. Thereaft...

Embodiment 3

[0122] First, as shown in FIG. 1, a pair of series electrodes 2a, 2b are provided on a first glass substrate 1 having a thickness of 1.1 mm with a slit between opposite electrodes of 40 μm. The electrodes 2a, 2b in this embodiment are each made of copper.

[0123] A method of forming copper electrodes in this embodiment will be described with reference to FIGS. 13-16. First, as shown in FIG. 13 , a copper film 14 as an electrode material film was formed on a glass substrate 1 by an electroless plating method to obtain a copper film 14 having a thickness of 17 μm. On this copper film 14 , a mask formed of a resist pattern 15 having a slit with a width of 3 μm was formed as shown in FIG. 14 .

[0124] Next, by using a reactive ion etching (RIE) apparatus (ULVAC Co., Ltd.), as shown in FIG. 15 , the copper film 14 was etched to selectively remove the copper film. The etching in this case is at 1-100Pa, 10-200SCCM and 400-1000V DC bias (V dc ) conditions, in BCl 3 (boron trich...

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PUM

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Abstract

A light-emitting device is provided, which includes an insulating substrate, a first electrode and a second electrode insulated from each other and formed above the insulating substrate, and an electrolyte disposed on the first electrode and the second electrode. The electrolyte contains an ionic liquid and luminescent pigment having a reversible redox structure. Each of the first electrode and the second electrode have an elongated configuration, in an unit length of each of the first electrode and the second electrode, a surface area is 3 to 1000 times as large as a ground contact area, the surface area being an area of a surface of each of the first electrode and the ground contact area being an area projected upon the insulating substrate as the insulating substrate provided with the first electrode and the second electrode is looked from a top surface of the insulating substrate.

Description

[0001] Cross References to Related Applications [0002] This application is based upon and claims the benefit of priority of a prior application of Japanese Patent Application No. 2005-283363 filed September 29, 2005, which is hereby incorporated by reference in its entirety. technical field [0003] The invention relates to a light emitting device and a method for manufacturing the light emitting device. Background technique [0004] As a planar type light emitting device, a solid EL (Electroluminescent) device is widely studied at present. Although it is possible to obtain high luminance with such an EL device, a voltage of at least 6V is required for its light emission. In addition, any attempt to obtain a large-area light-emitting device is limited due to the vapor-deposition film-forming process required in this case, and furthermore, such an attempt leads to an increase in the cost of manufacturing the light-emitting device. [0005] On the other hand, in the case o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): F21K2/08
CPCH05B33/145
Inventor 小林刚史御子柴智江口朋子久保木贵志岸敬村井伸次猿渡秀乡
Owner KK TOSHIBA