Vertical cavity surface emitting semiconductor laser device

a laser device and semiconductor technology, applied in semiconductor lasers, laser details, electrical equipment, etc., can solve the problems of halting the laser emission itself, reducing the optical output power of the vcsel device during a continuous laser, and affecting the reliability of optical data transmission, so as to reduce the output power and remove the resultant halt of the laser emission

Inactive Publication Date: 2005-10-06
FURUKAWA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The optimized VCSEL device suppresses the reduction in laser output power, ensuring continuous and reliable operation with improved reliability and longer emission wavelength capabilities.

Problems solved by technology

In the conventional VCSEL device as described above, it is observed that the VCSEL device reduces its optical output power during a continuous laser emission operation thereof.
The reduction of the optical output power sometimes results in halt of the laser emission itself and degrades the reliability of the optical data transmission.

Method used

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  • Vertical cavity surface emitting semiconductor laser device
  • Vertical cavity surface emitting semiconductor laser device
  • Vertical cavity surface emitting semiconductor laser device

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Embodiment Construction

[0028] Before describing preferred embodiments of the present invention, the principle of the present invention will be described for a better understanding of the present invention.

[0029] In general, degradation of a typical facet emission semiconductor laser device occurs due to the dislocation of a semiconductor layer caused by meltdown thereof at the rear facet of the laser device, which is generally called catastrophic optical damage (COD), or occurs due to the defect called dark line defect (DLD). On the other hand, since generation of a dislocation loop has been observed in the cross section of a degraded VCSEL device by using a transmission electron microscope, the degradation of the VCSEL device is considered to occur due to the point defects or combination thereof, the latter being generally called dislocation, in the crystal structure of the layer structure of the laser device.

[0030] For improved reliability of a specific type of the VCSEL having an oxidized current con...

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Abstract

A vertical cavity surface emitting semiconductor laser (VCSEL) device has p-type and n-type DBRs sandwiching therebetween a resonant cavity including an active layer. Each the DBRs has a plurality of layer pairs each including a Alx1Ga1-x1As high-reflectivity layer and an Alx2Ga1-x2As low-reflectivity layer and an Alx3Ga1-x3As slope content layer interposed between each of the high-reflectivity layers and adjacent low-reflectivity layer. The slope content layers in the vicinity of the active layer has an Al content x3 wherein 0<x3≦0.3 and 0.55≦x3<1 and an impurity concentration of 3×1017 cm−3 or above.

Description

BACKGROUND OF THE INVENTION [0001] (a) Field of the Invention [0002] The present invention relates to a vertical cavity surface emitting semiconductor laser device (VCSEL device) and, more particularly, to a VCSEL device for use as a light source in the field of optical data transmission and optical communications. [0003] (b) Description of the Related Art [0004] The VCSEL devices have attracted attentions in the data transmission field. The VCSEL device includes a pair of semiconductor multi-layer reflectors (referred to as DBRs hereinafter) overlying a semiconductor substrate, and a resonant cavity sandwiched between the DBRs and including an active layer for laser emission and a pair of cladding layers sandwiching therebetween the active layer. Each DBR includes a plurality of Al(Ga)As / (Al)GaAs layer pairs, and one of the DBRs passes therethrough a laser beam in the direction perpendicular to the substrate surface. [0005]FIG. 11 shows a conventional VCSEL device, which includes a...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01S5/183H01S5/323
CPCB82Y20/00H01S5/0021H01S5/18313H01S5/34306H01S5/18361H01S5/305H01S5/32366H01S5/18358
InventorSHINAGAWA, TATSUYUKIIWAI, NORIHIROYOKOUCHI, NORIYUKI
OwnerFURUKAWA ELECTRIC CO LTD