Multiflow integrated icp source

Abstract

Different gases are separately exposed to RF energy in different zones in inlets to a processing chamber. Plasma is activated in the gases in each of the zones separately and the activated gases are then introduced into the plasma processing chamber where they may undergo mutual interaction within a processing zone. Control of the active species distribution within the processing chamber is provided by control of the energizing of the gases in the separate inlet zones before they are combined in the processing zone. An ICP source energizes gas in each zone through an antenna having one or more conductors, each of which is coupled to a plurality of the zones. This allows gases to be brought together in their active states, rather than being combined and then activated, and allows the same or different parameters to be applied in different inlet zones.

Description

[0001]This invention relates to the inductively coupled sources, and particularly to plasma sources for processes that use multiple gases, and to plasma processing systems and reactors.BACKGROUND OF THE INVENTION [0002]A number of plasma processes, including several used in the manufacture of semiconductor wafers, involve the ionizing of more than one kind of gas or vapor. Often the relative degree of ionization and energy levels of different gases in a plasma make a difference in the effectiveness or quality of the plasma process being performed. For example, downstream plasma used for cleaning, surface preparation and modification, plasma used for wafer processing utilizing preferentially reactive radicals and charged species, plasma enhanced CVD, plasma etching, etc., each are most effective when any given gas is in an optimum energy or ionization state.[0003]The optimum parameters for ionizing different gases in a multiple gas plasma typically differ from one gas to another. How...

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