Apparatus for Forming a Conductive Transparent Oxide Film Layer for Use in a Cadmium Telluride Based Thin Film Photovoltaic Device

a technology of conductive transparent oxide and thin film, which is applied in the direction of lighting and heating apparatus, electric heating for furnaces, furnaces, etc., can solve the problems of reducing the viability of cold sputtering, reducing the attractiveness of hot sputtering tco layer, and depleting cadmium

Inactive Publication Date: 2012-11-29
FIRST SOLAR INC
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach enables the formation of TCO layers with conductivity comparable to cold sputtered layers while simplifying the process, reducing manufacturing costs and complexity by maintaining cadmium content and stoichiometry during the annealing process.

Problems solved by technology

Though the hot sputtering process is more streamlined (i.e., only requiring a single step), the hot sputtered TCO layers can have a much higher resistivity than the cold sputtered TCO layers—even when sputtered from the same material (e.g., cadmium stannate)—making the hot sputtered TCO layer less attractive for the end use.
However, other processing issues exist that hinders the viability of cold sputtering to form the TCO layer, especially from a cadmium stannate target.
However, contact plate is awkward for manufacturing use in a large commercial-scale manufacturing setting, and becomes depleted of cadmium during repeated use, requiring plate change.
As such, the use of such anneal plates adds manufacturing processes and materials, effectively increasing the manufacturing cost and complexity for formation of the PV modules.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus for Forming a Conductive Transparent Oxide Film Layer for Use in a Cadmium Telluride Based Thin Film Photovoltaic Device
  • Apparatus for Forming a Conductive Transparent Oxide Film Layer for Use in a Cadmium Telluride Based Thin Film Photovoltaic Device
  • Apparatus for Forming a Conductive Transparent Oxide Film Layer for Use in a Cadmium Telluride Based Thin Film Photovoltaic Device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019]Reference now will be made in detail to embodiments of the invention, one or more examples of which are illustrated in the drawings. Each example is provided by way of explanation of the invention, not limitation of the invention. In fact, it will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the scope or spirit of the invention. For instance, features illustrated or described as part of one embodiment can be used with another embodiment to yield a still further embodiment. Thus, it is intended that the present invention covers such modifications and variations as come within the scope of the appended claims and their equivalents.

[0020]In the present disclosure, when a layer is being described as “on” or “over” another layer or substrate, it is to be understood that the layers can either be directly contacting each other or have another layer or feature between the layers. Thus, the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
bandgapaaaaaaaaaa
energy bandgapaaaaaaaaaa
sputtering temperaturesaaaaaaaaaa
Login to View More

Abstract

Methods for forming a TCO layer on a substrate are generally provided and include sputtering a TCO layer on a substrate from a target including cadmium stannate. A cap material (e.g., including cadmium) is deposited onto an outer surface of an indirect anneal system, and the TCO layer can be annealed at an anneal temperature while in contact with or within about 10 cm of the cap material. An anneal oven is also generally provided and includes an indirect anneal system defining a deposition surface and an anneal surface such that a cap material deposited on the anneal surface of the indirect anneal system is positioned to be in contact with or within about 10 cm of a thin film on the substrate. A cap material source can be positioned to deposit the cap material onto the deposition surface such that the anneal surface comprises the cap material.

Description

PRIORITY INFORMATION[0001]The present application is a continuation of and claims priority to U.S. patent application Ser. No. 12 / 829,544 titled “Apparatus and Methods of Forming a Conductive Transparent Oxide Film Layer for Use in a Cadmium Telluride Based Thin Film Photovoltaic Device” of Feldman-Peabody, et al. filed on Jul. 2, 2010, which is incorporated by reference herein.FIELD OF THE INVENTION[0002]The subject matter disclosed herein relates generally to forming a conductive transparent oxide film layer. More particularly, the subject matter disclosed herein relates to apparatus and methods of forming a conductive transparent oxide film layer for use in cadmium telluride thin film photovoltaic devices.BACKGROUND OF THE INVENTION[0003]Thin film photovoltaic (PV) modules (also referred to as “solar panels”) based on cadmium telluride (CdTe) paired with cadmium sulfide (CdS) as the photo-reactive components are gaining wide acceptance and interest in the industry. CdTe is a semi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(United States)
IPC IPC(8): F27D11/02
CPCC23C14/086C23C14/56Y02E10/50C23C14/5846H01L31/1884C23C14/5806
InventorFELDMAN-PEABODY, SCOTT DANIELBLACK, RUSSELL WELDON
OwnerFIRST SOLAR INC