Methods for fabricating integrated circuits including generating e-beam patterns for directed self-assembly
a technology of integrated circuits and beam patterns, applied in the field of methods for fabricating integrated circuits, can solve the problems of high cost and complexity, and the current approach of generating e-beam patterns for defining dsa directing patterns to form dsa patterns does not fully account for the physical effects of the dsa process
Inactive Publication Date: 2015-05-07
GLOBALFOUNDRIES INC
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Problems solved by technology
While double and other multi-patterning processes can realize smaller pitch, these approaches are expensive and more complex.
Unfortunately, current approaches for generating an e-beam pattern for defining a DSA directing pattern to form a DSA pattern do not fully account for the physical effects that occur during the DSA process.
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[0013]The following Detailed Description is exemplary in nature and is not intended to limit the various embodiments or the application and uses thereof. Furthermore, there is no intention to be bound by any theory presented in the preceding background or the following detailed description.
[0014]Various embodiments contemplated herein relate to methods for fabricating integrated circuits. The exemplary embodiments taught herein generate an e-beam pattern for forming a DSA directing pattern on a semiconductor substrate. The DSA directing pattern is for guiding a self-assembly material (e.g., BCP) that is deposited on the DSA directing pattern and that undergoes directed self-assembly (DSA), e.g., phase separation during annealing, to form a DSA pattern. In an exemplary embodiment, the e-beam pattern is generated by inputting a DSA target pattern into a computing system. The DSA target pattern is a desired or predetermined DSA pattern that is to be fabricated on the semiconductor subs...
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Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes generating an e-beam pattern for forming a DSA directing pattern on a semiconductor substrate. The DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern. Generating the e-beam pattern includes using a computing system, inputting a DSA target pattern. Using the computing system, the DSA target pattern, a DSA model, and an EBPC model, an output EBPCed pattern is produced for an e-beam writer to write on a resist layer that overlies the semiconductor substrate.
Description
TECHNICAL FIELD[0001]The technical field relates generally to methods for fabricating integrated circuits, and more particularly relates to methods for fabricating integrated circuits including generating e-beam patterns for directed self-assembly.BACKGROUND[0002]Decreasing device size and increasing device density has traditionally been a high priority for the manufacturing of integrated circuits. Optical and electron beam (e-beam) lithography have been a driving force for device scaling. Conventional lithography is limited to about 80 nm pitch for single exposure patterning. While double and other multi-patterning processes can realize smaller pitch, these approaches are expensive and more complex.[0003]Directed self-assembly (DSA), a technique that aligns self-assembling polymeric materials on a lithographically defined directing or guide pattern, is a potential option for extending current lithography beyond its pitch and resolution limits. The self-assembling materials, for exa...
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IPC IPC(8): G06F17/50H01L21/033H01L21/027
CPCG06F17/5081H01L21/0337H01L21/0273
Inventor LATYPOV, AZATZOU, YIDAI, VITO
Owner GLOBALFOUNDRIES INC