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Self-Aligned Semiconductor Gate Cut

a gate cut and self-aligning technology, applied in the field of semiconductor device structures, can solve problems such as the threshold behavior degradation of these devices

Active Publication Date: 2020-08-13
INT BUSINESS MASCH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In some scenarios, the reduced channel length may result in short channel effects, which degrades the threshold behavior of these devices.

Method used

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  • Self-Aligned Semiconductor Gate Cut
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  • Self-Aligned Semiconductor Gate Cut

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Experimental program
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Embodiment Construction

Overview

[0048]In the following detailed description, numerous specific details are set forth by way of examples to provide a thorough understanding of the relevant teachings. However, it should be apparent that the present teachings may be practiced without such details. In other instances, well-known methods, procedures, components, and / or circuitry have been described at a relatively high-level, without detail, to avoid unnecessarily obscuring aspects of the present teachings.

[0049]In one aspect, spatially related terminology such as “front,”“back,”“top,”“bottom,”“beneath,”“below,”“lower,” above,”“upper,”“side,”“left,”“right,” and the like, is used with reference to the orientation of the Figures being described. Since components of embodiments of the disclosure can be positioned in a number of different orientations, the directional terminology is used for purposes of illustration and is in no way limiting. Thus, it will be understood that the spatially relative terminology is in...

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Abstract

A semiconductor and a method of creating the same are provided. The semiconductor structure includes a first set of fins and a second set of fins disposed on a substrate. There is a high-k dielectric disposed on top of the substrate and the first and second set of fins. There is a work-function metal disposed on top of the high-k dielectric. There is a pinch-off layer disposed on top of the work-function metal (WFM). There is a first dielectric layer disposed on top of the pinch-off layer. There is a second dielectric material configured as a gate cut between the first set of fins and the second set of fins, wherein the second dielectric material cuts through the nitride, pinch-off, and WFM layers.

Description

BACKGROUNDTechnical Field[0001]The present disclosure generally relates to semiconductor device structures and their methods of manufacture, and more specifically to FinFET architectures.Description of the Related Art[0002]Performance demand for semiconductor transistors have been steadily increasing while their dimensions have shrunk. In this regard, field effect transistors (FETs) have experienced a substantial increase in performance and a planar miniaturization. Such structures typically include a source, a drain, a channel that is positioned between the source region and the drain region, and a gate positioned above the channel region. Current flow through the device is controlled by controlling a voltage applied to the gate electrode. Ideally, if there is no voltage applied to the gate electrode, then there is no current flow through the device. When an appropriate voltage is applied to the gate electrode, the channel region becomes conductive, and electrical current is permit...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/28H01L27/088H01L29/66H01L21/8234
CPCH01L27/0886H01L21/823431H01L29/66545H01L21/823437H01L21/28123H01L21/823481
Inventor XU, PENGCHENG, KANGGUOBAO, RUQIANG
Owner INT BUSINESS MASCH CORP