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Thin film transistor and thin film transistor array panel including the same

a technology of thin film transistors and array panels, which is applied in the direction of transistors, semiconductor devices, electrical devices, etc., can solve the problems of deterioration of the characteristics of the thin film transistor as a switching element, increased manufacturing costs, and complicated processes, so as to improve the characteristics of the thin film transistor

Active Publication Date: 2014-03-04
SAMSUNG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0029]According to the exemplary embodiments of the present invention, the parasitic capacitance between the gate electrode and a source region or a drain region of a semiconductor layer of a thin film transistor may be reduced such that the characteristics of the thin film transistor may be improved.

Problems solved by technology

Polysilicon, which has relatively high charge mobility, is subjected to a crystallizing process, such that manufacturing cost is increased and the process is complicated.
If parasitic capacitance is generated between the gate electrode and the source electrode or the drain electrode of a thin film transistor, characteristics of the thin film transistor as a switching element may be deteriorated.

Method used

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  • Thin film transistor and thin film transistor array panel including the same
  • Thin film transistor and thin film transistor array panel including the same
  • Thin film transistor and thin film transistor array panel including the same

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Embodiment Construction

[0037]The embodiments of the present invention will be hereinafter described in greater detail with reference to the accompanying drawings. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

[0038]In the drawings, the thickness of layers, films, panels, regions, etc., may be exaggerated for clarity. Like reference numerals may designate like or similar elements throughout the specification and the drawings. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on”, “connected to”, or “coupled to” another element, it can be directly on, connected or coupled to the other element or intervening elements may also be present.

[0039]As used herein, the singular forms, “a”, “an”, and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0040]As will be a...

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PUM

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Abstract

A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority to Korean Patent Application No. 10-2012-0034099 filed in the Korean Intellectual Property Office on Apr. 2, 2012, the entire contents of which are herein incorporated by reference.TECHNICAL FIELD[0002]Embodiments of the present invention relate to a thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same.DISCUSSION OF THE RELATED ART[0003]Thin film transistors (TFTs) are used in various electronic devices, such as flat panel displays. For example, thin film transistors are used as switching elements or driving elements in a flat panel display, such as a liquid crystal display (LCD), an organic light emitting diode (OLED) display, and an electrophoretic display.[0004]A thin film transistor includes a gate electrode connected to a gate line to transmit a scanning signal, a source electrode connected to a data line to transmit a signal applied to a p...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L29/12
CPCH01L27/1225H01L29/786H01L29/7869H01L27/1288H01L27/1214H01L29/78696H01L21/0262H01L21/385H01L21/441H01L27/1259H01L29/41733H01L29/66969H01L29/78633H01L29/42384
Inventor LEE, YONG SUKHANG, YOON HOKIM, DONG JONA, HYUN JAEPARK, SANG HOYU, SE HWANCHANG, CHONG SUP
Owner SAMSUNG DISPLAY CO LTD