Optical projection system, exposure device and method

Abstract

A projection optical system for forming an image of a pattern in a first plane onto a second plane using exposure light in a wavelength region of shorter than 200 nm. When a projection pattern placed in the first plane and having a dark pattern and a light pattern around the dark pattern is projected onto the second plane, an average illuminance in a area where a projected image of the dark pattern is formed in the second plane is 8 or less, where an illuminance of an image of the light pattern around the dark pattern in the second plane is set to be 100.

Description

technical field [0001] The present invention relates to a projection optical system for projecting a pattern image on a cross mark onto a substrate, an exposure device equipped with the projection optical system, and an exposure method using the exposure device. Background technique [0002] In recent years, semiconductor integrated circuits have entered into high integration and high density. In order to make the line width of the semiconductor integrated circuit thinner and the circuit pattern more precise, the lithographic resolution of the exposure device used for manufacturing the semiconductor integrated circuit is required to be further improved. In order to improve the lithography resolution of the exposure device, the exposure light used by the exposure device has so far entered the short wavelength of g-line (436nm), i-line (365nm) and KrF excimer laser (248nm). At present, more attempts are made to shorten the wavelength of exposure light in a wavelength range sh...

AI Technical Summary

Problems solved by technology

Due to the existence of local flashes, when a predetermined line width is to be formed on the wafer, the formed line width will become thinner than the predetermined line width, which will cause the problem that the manufactured semiconductor elements cannot have the desired performance

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