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Method and apparatus for producing polysilicon film, semiconductor device, and manufacture thereof

A manufacturing method and a manufacturing device technology, which are applied in the field of polycrystalline silicon film manufacturing and manufacturing devices, and can solve the problems of small second harmonic output, difficult polycrystalline silicon film manufacturing, etc.

Inactive Publication Date: 2007-12-12
MITSUBISHI ELECTRIC CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the small output of the second harmonic of the YAG laser, only a small area of ​​amorphous silicon film can be polycrystallized
Therefore, it is difficult to perform the production of polycrystalline silicon films for the production of large-area liquid crystal displays

Method used

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  • Method and apparatus for producing polysilicon film, semiconductor device, and manufacture thereof
  • Method and apparatus for producing polysilicon film, semiconductor device, and manufacture thereof
  • Method and apparatus for producing polysilicon film, semiconductor device, and manufacture thereof

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Embodiment approach 1

[0061] 1 to 6 are diagrams showing a method of manufacturing a polycrystalline silicon film according to Embodiment 1 of the present invention. As shown in FIG. 1, a silicon oxide film 32 is formed on a glass substrate 31 by, for example, CVD. An amorphous silicon film 33 is formed on the silicon oxide film 32 by CVD. The amorphous silicon film 33 has a first region 33a and a second region 33b in contact with the first region 33a.

[0062] As shown in FIGS. 2 and 3 , second harmonic laser light (wavelength 523 nm) of Q-switched Nd:YAG is irradiated on the first region 33 a of the amorphous silicon film 33 . As a result, the portion irradiated with the laser light 35 is polycrystallized to form the first polycrystalline portion 34a. At this time, the apparatus shown in FIG. 3 was used for laser irradiation.

[0063]As shown in Figure 3, the manufacturing apparatus 100 of polycrystalline silicon film comprises: the oscillator 120 that oscillates and produces the laser light o...

Embodiment approach 2

[0090] 13 is a perspective view showing a method of manufacturing a polycrystalline silicon film according to Embodiment 2 of the present invention. In the polycrystalline silicon film manufacturing apparatus 180 shown in FIG. 13 , the polycrystalline silicon film shown in FIG. The irradiation unit is different from the film production apparatus 100 . That is, in the polycrystalline silicon film manufacturing apparatus 180 shown in FIG. 13, as the irradiation unit, there are a first irradiation unit 110a, a second irradiation unit 110b, and a third irradiation unit 110c. The first, second, and third irradiation units 110a, 110b, and 110c are composed of a mirror 111 and a beam shaping optical system 112, respectively. The mirror 111 and the beam shaping optical system 112 are the same as those shown in FIG. 3 . Each beam shaping optical system 112 is connected to a laser oscillator 120a as a first oscillating unit, a laser oscillator 120b as a second oscillating unit, and a l...

Embodiment approach 3

[0098] Fig. 17 is an oblique view showing a polycrystalline silicon film manufacturing apparatus according to Embodiment 3 of the present invention. As shown in FIG. 17, a polycrystalline silicon film manufacturing apparatus 190 according to Embodiment 3 of the present invention is different in that laser light emitted from one laser oscillator 420 is irradiated onto three irradiation units. That is, the irradiation unit has a first irradiation unit 210a, a second irradiation unit 210b, and a third irradiation unit 210c. Each of the irradiation units 210a, 210b, and 210c has the same beam shaping optical system 112 and mirror 111 as those of the first embodiment. The mirror surface 111 reflects laser light with a wavelength of 390 nm to 640 nm oscillated from the laser oscillator 420, and the laser light is irradiated onto the amorphous silicon film 33 as laser beams 35a, 35c, and 35c through the beam shaping optical system 112 and the mirror surface 111. . That is, in this ...

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Abstract

A process for a polycrystal silicon film is provided with the step of forming, on a glass substrate (31), an amorphous silicon film (33) having a first region (33a) and a second region (33b) that contacts this first region (33b), the step of forming a first polycrystal portion (34a) by irradiating the first region (33a) of the amorphous silicon film (33) with a laser (35) of which the wavelength is not less than 390 nm and not more than 640 nm and the step of forming a second polycrystal portion (34b) that contacts the first polycrystal portion (34a) by irradiating the second region (33b) and the portion of the region of the first polycrystal portion (34a) that contacts the second region (33b) of the amorphous silicon film (33) with the laser (35) of which the wavelength is not less than 390 nm and not more than 640 nm.

Description

technical field [0001] The present invention relates to a manufacturing method and manufacturing apparatus of a polycrystalline silicon film, a semiconductor device, and a manufacturing method thereof. More specifically, it relates to a manufacturing method and manufacturing apparatus of a polycrystalline silicon film excellent in crystallinity for realizing a high-mobility thin film transistor, a semiconductor device using the polycrystalline silicon film, and a manufacturing method thereof. Background technique [0002] Now, the pixel part of the liquid crystal screen is switched by a thin film transistor composed of an amorphous or polycrystalline silicon film on a substrate of glass or synthetic quartz to form an image. If the driving circuit for driving the pixel transistors (mainly installed externally and independently) can be formed on the panel at the same time, a dramatic improvement can be made in terms of manufacturing cost and reliability of the liquid crystal p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20C23C16/24C23C14/58H01L21/336
CPCY10S438/969H01L21/02532H01L29/66757H01L21/02691C23C14/5813B23K26/0838H01L21/02678B23K26/0604B23K26/0738B23K26/352B23K2101/40B23K2103/52G02F1/13
Inventor 小川哲也时冈秀忠西前顺一冈本达树佐藤行雄井上满夫宫坂光敏次六宽明
Owner MITSUBISHI ELECTRIC CORP
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