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Threshold value helium introducing method in metallic film

A metal thin film and thin film technology, which is applied in the field of nuclear energy technology, can solve the problems of uneven distribution, difficulty in distinguishing radiation damage, lattice damage, and large crystal structure damage.

Inactive Publication Date: 2008-02-06
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the high-energy implantation increases the implantation depth, the distribution along the depth is not uniform, and the crystal structure is also greatly damaged during the implantation process, and it is difficult to distinguish the radiation damage caused by the bombardment of charged ions and the lattice damage caused by He accumulation.

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  • Threshold value helium introducing method in metallic film
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Embodiment Construction

[0024] Embodiment, introducing hydrogen and helium in the deposited Ti film, in the vacuum sputtering equipment, when the pressure in the vacuum chamber reaches 2×10 -4 Pa, helium (He), hydrogen (H 2 ), helium (Ar) mixed gas, wherein the flow ratio of Ar / He is 42, H 2 The flow ratio of / Ar is 0.05, the total pressure of the mixed gas is 0.95Pa, the discharge voltage and current are 310V and 0.12A, respectively, and the substrate temperature is room temperature, so that hydrogen and helium are co-introduced into the titanium film, and the hydrogen and helium in the film The depth distribution inside is shown in Figure 1.

[0025] In addition to being used in tritium decay simulation research, the invention can also be applied in ion implantation of helium to generate porous layers. For example, Smart-Cut technology in microelectronic materials, and helium pores in semiconductor thin film materials act as effective adsorbents for harmful transition metal impurities, etc.

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Abstract

The invention pertains the art of nuclear energy technical application, a specific method for introducing threshold helium energy in a metal film. It introduces mixing gases of helium and argon during the process of depositing metal films by means of vacuum magnetron sputtering; controls the flow ratio of helium and argon properly; adds a certain voltage in the target cathode, from which generates gases to discharge and then gets metal films containing helium. The invention would not impair crystal structure, and helium introduced spread homogeneously and the concentration can be controlled. In the invention, the mixing gases can add hydrogen, realizing hydrogen and helium lead-in at the same time. The present invention can be applied to porous layer produced by ion implantating helium as well as tritium decay analog study.

Description

technical field [0001] The invention belongs to the application field of nuclear energy technology, and in particular relates to a method for introducing threshold energy helium into a metal thin film. Background technique [0002] In many areas of nuclear energy technology, the generation and behavior of He in materials are involved. Except that He can be produced by (n, α) neutron capture reaction in the structural material of the fusion reactor, the surface of the first wall material of the fusion reactor is bombarded by the α particles of deuterium and tritium plasma fusion products, or the tritium dissolved in the material The decay produces a large number of 3 He. When the He in the material reaches a certain concentration, it will aggregate into bubbles, resulting in a decrease in the macroscopic properties of the material (such as elongation, creep rupture time, and fatigue life decrease, that is, helium brittleness). Therefore, the development of high-performance...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 施立群
Owner FUDAN UNIV