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Constant resistivity film material and its preparing process

A thin film material, constant resistance technology, applied in the direction of coating resistance materials, resistors, non-adjustable metal resistors, etc., can solve problems such as failure and device performance deterioration.

Inactive Publication Date: 2008-02-13
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The resistance of the material in the electronic device is easily affected by the temperature of the surrounding working environment and changes greatly. This characteristic can easily lead to deterioration or even failure of the performance of the device.

Method used

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  • Constant resistivity film material and its preparing process

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Embodiment 1

[0019] The single crystal silicon wafer was ultrasonically cleaned in acetone and alcohol for 30 minutes respectively, and after drying, the single crystal silicon wafer was placed on the sample stage in the vacuum deposition chamber of the reactive magnetron sputtering system, and the cathode target material had a purity of 99.99% copper and palladium, the area ratio of copper and palladium is 1:1.7×10 -2 , The distance between the single crystal silicon wafer and the target is 40-60mm. When the background vacuum degree is not lower than 10 -4 Pa, nitrogen with a gas purity of 99.99% (N 2 ), adjust the working air pressure to 6.0~9.0×10 -1 Pa, the power supply is 50-150W, pre-sputter the target for 30 minutes, then remove the baffle, start sputtering deposition, and the deposited Cu can be obtained 3 NPd 0.238 film. Cu from Figure 1 3 NPd 0.238 It can be seen from the graph of resistivity versus temperature variation of thin film materials that the relative change of r...

Embodiment 2

[0021] Ultrasonic clean the quartz glass sheet in acetone and alcohol for 30 minutes respectively, and after drying, put the quartz glass sheet on the sample stage in the vacuum deposition chamber of the reactive magnetron sputtering system. The cathode target material is not low in purity. For 99.9% copper and palladium, the area ratio of copper and palladium is 1:8.5×10 -3 , The distance between the quartz glass sheet and the target is 40-60mm. When the background vacuum degree is not lower than 10 -4 Pa, the gas purity of 99.99% nitrogen (N 2 ), adjust the working air pressure to 6.0~9.0×10 -1 Pa, the power supply is 50-150W, pre-sputter the target for 30 minutes, then remove the baffle, start sputtering deposition, and the deposited Cu can be obtained 3 NPd 0.133 film. Cu from Figure 2 3 NPd 0.133 It can be seen from the graph of resistivity versus temperature variation of thin film materials that the relative change of resistivity is <1.0% within a large range of 5...

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Abstract

This invention discloses a constant resistivity film material Cu3NPdx and a preparation method of its magnetic sputter method, among which, 0.13 is less than x less than 0.24, the target material is the Cu target and Pd target with the purity not less than 99.9%, N is the reacting gas, the Pd content in the deposited film is determined by regulating the areas occupied by the two. The resistivity of the Cu3NPdx film varies less than 1.0% relatively within 5K-250K, or the resistivity temperature factor is almost zero.

Description

technical field [0001] The invention relates to a resistance material, in particular to a constant resistivity film material and a preparation method thereof. Background technique [0002] Thermal stability is an important issue in the fabrication and application of electronic devices. Among them, the constant resistance characteristic of the resistor in a certain temperature range makes it have a very important application prospect in the aerospace electronics industry and the environment with large temperature changes. The resistance of materials in electronic devices is easily affected by the temperature of the surrounding working environment and changes greatly. This characteristic can easily cause the performance of the device to deteriorate or even fail. Therefore, to explore new constant resistance materials in a large temperature conversion region has always been a research hotspot for scientific researchers, such as the fastest-growing alloys such as Ni-Cr and Ni-C...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/02H01C7/00H01C17/12
Inventor 曹则贤纪爱玲马利波杜允
Owner INST OF PHYSICS - CHINESE ACAD OF SCI