Unlock instant, AI-driven research and patent intelligence for your innovation.

Ferroelectric memory and method of manufacturing the same

A manufacturing method and ferroelectric technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of reduced polarization, damage, and increased leakage current of ferroelectric memory

Inactive Publication Date: 2009-02-18
FUJITSU SEMICON LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, this ferroelectric memory may also be damaged due to the unique piezoelectric characteristics of PZT-based ferroelectric materials.
Due to these damages, the ferroelectric memory suffers from deterioration in characteristics such as a decrease in the amount of polarization or an increase in leakage current.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ferroelectric memory and method of manufacturing the same
  • Ferroelectric memory and method of manufacturing the same
  • Ferroelectric memory and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] Next, preferred embodiments of the present invention will be described with reference to the drawings.

[0039] 1. Manufacturing method of ferroelectric memory

[0040] Figure 1 to Figure 5 It is a schematic cross-sectional view of a method of manufacturing a ferroelectric memory according to an embodiment of the present invention.

[0041] Next, an example of a method of manufacturing a ferroelectric memory will be described.

[0042] (1) First, if figure 1 As shown, a substrate 10 is prepared. Base body 10 can be composed of, for example, a silicon substrate and a silicon oxide film formed thereon. Furthermore, functional devices such as transistors may be formed on the substrate 10 .

[0043] Next, on the substrate 10, a conductive layer 20a for the lower electrode (hereinafter, the lower electrode layer 20a), a layer 30a for the ferroelectric layer (hereinafter, the ferroelectric layer 30a), and a layer for the upper electrode are sequentially laminated. The ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a high reliable ferroelectric memory difficuit to deterioration after manufacturing procedure and a manufacturing method. The method of manufacturing a ferroelectric memory includes: (a) stacking a lower electrode layer, a ferroelectric layer, and an upper electrode layer on a base in that order to form a ferroelectric laminate; (b) patterning the ferroelectric laminate to form a ferroelectric capacitor; (c) forming a first barrier film which covers the ferroelectric capacitor by physical vapor deposition; and (d) forming a second barrier film which covers the first barrier film by chemical vapor deposition.

Description

technical field [0001] The invention relates to a ferroelectric memory and its manufacturing method. More particularly, the present invention relates to a ferroelectric memory in which a capacitor is partially covered with a barrier film and a method of manufacturing the same. Background technique [0002] In recent years, research and development of ferroelectric memories has been actively carried out. A ferroelectric memory employs a structure in which a ferroelectric is formed between a lower electrode layer and an upper electrode layer. A ferroelectric material such as a PZT system composed of an oxide containing Pb, Zr, and Ti used in a ferroelectric memory reacts with a reducing agent such as hydrogen, and is damaged by oxygen deficiency. In addition, such a ferroelectric memory may be damaged due to the unique piezoelectric characteristics of the PZT-based ferroelectric material. Due to these damages, the ferroelectric memory exhibits characteristic degradation phe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/10H01L29/92H01L21/82H01L21/02
Inventor 松本昭人神谷俊幸山田健二名取荣治木下智雄
Owner FUJITSU SEMICON LTD