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Image sensor with decreased optical interference between adjacent pixels

An image sensor and pixel technology, applied in the direction of semiconductor devices, electrical solid state devices, semiconductor/solid state device components, etc., can solve problems such as image feature degradation, color distortion, lattice pattern sensing, etc.

Active Publication Date: 2009-03-18
CROSSTEK CAPITAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This optical interference can cause degradation of image characteristics such as lattice pattern sensing or color distortion

Method used

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  • Image sensor with decreased optical interference between adjacent pixels
  • Image sensor with decreased optical interference between adjacent pixels
  • Image sensor with decreased optical interference between adjacent pixels

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Experimental program
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Embodiment Construction

[0024] An image sensor with reduced optical interference between adjacent pixels according to exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0025] image 3 A cross-sectional view of a CMOS image sensor configured to show a pixel region and a peripheral region according to a first embodiment of the present invention is illustrated.

[0026] A field oxide layer (FOX) structure is formed in the substrate SUB in which a highly doped P++ type region (not shown) and a p-type epitaxial layer (not shown) have been formed. Although not illustrated, a plurality of gates including transfer gates are formed on the substrate SUB. For example, an N-type region (not shown) is formed in the deep bottom region of the substrate SUB aligned with one side of the transfer gate by using an ion implantation process. A P-type region (not shown) is formed in a region in contact with the surface of the substrate SUB. The N-t...

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Abstract

An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1, first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M, at least one layer of dummy metal lines formed over the Mth metal lines but formed not to overlap with the photodiode, and a microlens formed over the one layer of the dummy metal lines to overlap with the photodiode.

Description

technical field [0001] The present invention relates to an image sensor, and more particularly to an image sensor with improved light sensitivity by reducing optical interference between adjacent pixels. Background technique [0002] Complementary metal-oxide-semiconductor (CMOS) devices have been widely implemented in various devices, such as mobile phones, personal computer cameras, and electronic devices. Compared with charge-coupled devices (CCDs) that have been used as typical image sensors, CMOS image sensors can be easily driven and allow a system-on-chip (SoC) in which many signal processing circuits are integrated on one chip. Due to the SoC, the modules of the CMOS image sensor can be minimized. Likewise, generally known methods can be used to implement CMOS devices, and thus manufacturing costs can be reduced. [0003] figure 1 A simplified top view illustrating an image sensor in which four unit pixels are arranged. Four unit pixels UP each having a photodiod...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L23/522
Inventor 李源镐赵东宪
Owner CROSSTEK CAPITAL