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Method for determining grinding time of chemical and mechanical grinding technology

A chemical-mechanical and grinding-time technology, applied in specific mathematical models, manufacturing tools, metal processing equipment, etc., can solve the problems of increasing labor burden and equipment and material costs, avoiding errors, saving costs, and improving yields. Effect

Inactive Publication Date: 2009-04-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This reduces the loss of product yield (yield rate) to a certain extent, but at the same time increases the labor burden and the cost of equipment and materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] In semiconductor devices, similar products are defined relative to the large process size and performance of the device. From the perspective of the chemical mechanical polishing process, even with the same front film and residual film specifications, the polishing rate of the product is different due to the difference in step height and pattern density. Therefore, the condition key obtained only by copying or pre-set by the engineer often causes the remaining film to deviate from the center value and exceed the specification during the actual operation process, and in severe cases, it will affect the yield rate of the product or even waste the film.

[0010] The chemical mechanical grinding process of the actual product can be carried out in two simple steps:

[0011] The first step is the local planarization process, the local planarization process, the grinding rate is related to the pattern density of the product, the grinding time is: T1=H / RR(p), where H is the abb...

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Abstract

The present invention discloses a method confirming the grinding time of chemical-mechanical grinding technology; the present invention can calculate the key value of the present novel product according to a simulation formula and further calculate the grinding time; in the way, the accuracy of the key value can be promoted and the rate of qualified products is promoted; in addition, the cost can be saved. The crux of the method is to establish the simulation formula of chemical-mechanical grinding key that is key equal to (pre*(1-k1)+target*k1+(k1- 1 / M(p))*H) / 100 according to the information of present products; pre is the front film thickness; the target is the used film price; k1 is the relevant coefficient between the grinding velocity and the pilot optical lens grinding velocity when the product is near or has reached the flattening state; M(p) is the ratio between the grinding velocity and the pilot optical lens grinding velocity before the product is near or has reached the flattening state and H is the step height of the product.

Description

technical field [0001] The invention relates to a method for determining the grinding time of a chemical mechanical grinding process. Background technique [0002] In semiconductor manufacturing, with the emergence of multi-layer wiring, large step differences and unevenness appear on the surface of the silicon wafer, resulting in poor metal wiring and subsequent difficulty in focusing in lithography. To solve this problem, the CMP (Chemical Mechanical Polishing) process was introduced. Through chemical reaction and mechanical grinding and polishing, the surface pattern of silicon wafer tends to be flattened. [0003] In the chemical mechanical polishing process of semiconductor manufacturing, the grinding time of the product chemical mechanical polishing is mainly calculated through the chemical mechanical polishing condition key (Key), the polishing rate of the pilot light plate, and the front film value, so as to achieve the monitoring of the remaining film thickness . ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B29/02H01L21/304G06N7/00
Inventor 刘艳平李晗玲
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP