Solution method of metal silicide deposit extension by STI edge
A metal silicide and edge technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of large leakage current and achieve the effect of solving excessive leakage current
Active Publication Date: 2009-04-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0003] The technical problem to be solved by the present invention is to provide a method for the metal silicide precipitation to extend downward along the small corner of the STI edge, to solve the problem of the insoluble metal silicide growth and precipitation along the STI edge due to the existence of the small concave corner of the STI edge. The problem of extending downward with the small corner of the depression
[0005] The present invention can solve the problem of excessive leakage current caused by the small edge angle caused by the existing STI process due to the addition of processes such as precipitated silicon dioxide film
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[0009] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.
[0010] Such as figure 2 Shown is the process flow diagram of the present invention. As shown in the figure, the method of the present invention deposits a layer of silicon dioxide film before the deposition of salicide, the silicon dioxide film covers the STI part and the device part, and protects the silicon dioxide film of the STI part and the silicon dioxide film in the STI part through one photolithography. The silicon dioxide film on both sides of the STI is removed by etching the unprotected part of the silicon dioxide film, so that the small recessed corners of the STI and its edge are overcome, and the subsequent salicide process will not appear again. The problem of extending down the sidewalls of the STI during deposition so that the leakage current of the final device can be controlled.
[0011] Such as image 3 Shown i...
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The invention is concerned with the method that can solve the metal silicide deposition extend downwards along STI edge small angular. The existing technics is: deposits a layer of silicon dioxide film before processing metal silicide deposition, then processes a photo-etching, protects the STI part and extends to both sides, wipes off the un-protecting part of silicon dioxide film by etch. The invention can solve the problem that because the existing of the STI edge hollow small angular, lead to the metal silicide extend downward along the hollow small angular during the growth deposition processing.
Description
technical field [0001] The invention relates to a manufacturing process of a semiconductor device, in particular to a method for solving the problem of metal silicide precipitation extending downward along a small corner of an STI (Shallow Trench Isolation) edge. Background technique [0002] Currently, shallow trench isolation (STI) technology has been widely used for existing small-sized MOS devices. In the process flow of device manufacturing, due to the existence of small recessed corners at the edge of STI, it often leads to the downward extension along the small recessed corners during the growth and precipitation of refractory metal silicide (Salicide) (such as figure 1 As shown), the downward extension of this Salicide will objectively lead to shallower junctions (Junction) on both sides of the STI, and increased leakage current (Leakage), which has already had a great impact on the performance of the device, and has a great impact on the existing Process requiremen...
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IPC IPC(8): H01L21/76
Inventor 陈晓波陈华伦胡君
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP