Semiconductor structure and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as large leakage current

Active Publication Date: 2012-08-22
BEIJING YANDONG MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Applying this method can effectively solve the problem of excessive leakage current due to the amplification effect of parasitic BJT when using NMOS / PMOS or Cascaded NMOS / PMOS as ESD protection in thick epitaxial devices

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0031] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0032] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not int...

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PUM

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Abstract

The invention provides a method for manufacturing a semiconductor structure. The method comprises the following steps of: providing a semiconductor substrate and forming an epitaxial layer on the semiconductor substrate; forming a semiconductor device on the epitaxial layer; forming a leakage current absorbing region, wherein the leakage current absorbing region is located at one side of a leakage region of the semiconductor device and does not contact with the leakage region. Accordingly, the invention further provides a semiconductor structure manufactured by the method. With the adoption of the method and the semiconductor structure disclosed by the invention, the leakage current in a thick epitaxial device can be effectively reduced, and thus the whole performance of the semiconductor device can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] Static electricity exists all the time in nature. When the human body can feel the existence of static electricity, the static electricity generated has reached tens of thousands of volts, which is enough to damage most electronic components. [0003] With the development of the semiconductor industry, integrated circuits with higher performance and stronger functions require greater component density, and the size, size, and space of each component, between components, or each component itself need to be further reduced (currently, it has reached nanometers. level), so the requirements for process control in the manufacturing process of semiconductor devices are relatively high. [0004] However, when the external environment of the chip or the static charge accumulated inside ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L27/02H01L29/78
Inventor 姜一波曾传滨杜寰
Owner BEIJING YANDONG MICROELECTRONICS
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