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Electric sensor formed on semiconductor base and its forming method

A technology of inductors and semiconductors, applied in the field of inductors, can solve problems such as large process changes and broadband performance degradation

Active Publication Date: 2009-08-12
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this solution increases sidewall capacitive coupling and thus degrades the broadband performance of the figure of merit
Another solution is to widen the coil of the inductor, but too wide a coil tends to violate the chemical-mechanical polishing (CMP) rules but in this way, after the resistance is reduced, the maximum quality factor improves but The amount of process variation is significantly larger

Method used

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  • Electric sensor formed on semiconductor base and its forming method
  • Electric sensor formed on semiconductor base and its forming method
  • Electric sensor formed on semiconductor base and its forming method

Examples

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Embodiment Construction

[0030] figure 1 A conventional inductor 100 fabricated on a semiconductor substrate (not shown) will be described. Inductor 100 is formed purely of metal without any insulator material. In contrast to this, Figure 2A An inductor 200 according to an embodiment of the present invention is described. The inductor 200 is a metal inductor with an insulator block embedded therein, and the inductor 200 is also formed on a semiconductor substrate (not shown). Inductor 200 includes a single metal layer and an insulator layer. The metal layer constitutes the coil of the inductor 200 . The insulator layer includes at least one insulator block, and each insulator block is included in the metal layer. Figure 2B is an enlarged view of the lower left corner of inductor 200 . A row of insulator blocks is arranged along the entire length of the coil of inductor 200 . For example, each of insulator blocks 201 and 202 is included inside a metal layer. Each insulator block 201 is an elo...

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PUM

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Abstract

The present invention provides an inductor formed on a semiconductor substrate. The inductor includes a metal layer and an insulator layer. The metal layer constitutes the coil of the inductor. The insulator layer includes at least one insulator block, and each insulator block is included in the metal layer.

Description

technical field [0001] The present invention relates to the fabrication of inductors on semiconductor substrates, and more particularly to an inductor having an insulator slot formed therein and a method of forming such an inductor. Background technique [0002] Inductors are widely used in radio frequency (RF) applications. The applications described cover a very broad spectrum. Some applications such as personal handy-phone system (PHS) require inductors to operate at frequencies below 1 GHz. Therefore, the maximum quality factor of the inductor (hereinafter abbreviated as Q) must be shifted to the sub-GHz (sub-GHz) range. [0003] For inductors with acceptable inductance and maximum quality factor below 1 GHz, the existing solution is to stack metal layers in parallel. However, this solution increases sidewall capacitive coupling and thus degrades the broadband performance of the figure of merit. Another solution is to widen the coil of the inductor, but too wide a co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/00H01L27/04H01L21/00H01L21/02H01L21/822H01F17/00H01F41/00
Inventor 许村来欧俊宏陈瑞芳许绩威
Owner UNITED MICROELECTRONICS CORP