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Process of depositiong TiN film on glass substrate

A glass substrate and thin film technology, applied in the field of depositing TiN thin films, can solve the problems of cumbersome operation process and achieve the effect of simple process

Inactive Publication Date: 2009-11-18
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods are used to control the properties of the film, and the operation process is relatively cumbersome.

Method used

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  • Process of depositiong TiN film on glass substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] 1) Clean the glass substrate with 10% hydrofluoric acid;

[0017] 2) Put the glass substrate on the graphite support of the reaction chamber of the chemical vapor deposition device, and the reaction chamber is evacuated to -0.02Mpa, and N 2 Clean the reaction chamber;

[0018] 3) Adjust the distance between the nozzle and the glass substrate to be 5cm;

[0019] 4) Heating the reaction chamber to 600°C;

[0020] 5) TiCl 4 , NH 3 and N 2 The reaction gas is passed into the reaction chamber, where TiCl 4 The flow rate is 300sccm, NH 3 The flow rate is 150sccm, N 2 The flow rate is 900sccm, the pressure of the reaction chamber is -0.02MPa, the deposition is carried out at a temperature of 600°C, and the reaction time is 90s. After the reaction is completed, stop feeding the gas and cool it down.

[0021] The resistivity of the prepared TiN film is 1.5×10 4 μΩ.cm, the reflectivity in the infrared region is 45%, and with the increase of wavelength, the reflectivity o...

Embodiment 2

[0023] 1) Clean the glass substrate with 10% hydrofluoric acid;

[0024] 2) Put the glass substrate on the graphite support of the reaction chamber of the chemical vapor deposition device, and the reaction chamber is evacuated to -0.02Mpa, and N 2 Clean the reaction chamber;

[0025] 3) Adjust the distance between the nozzle and the glass substrate to be 25cm;

[0026] 4) Heating the reaction chamber to 600°C;

[0027] 5) TiCl 4 , NH 3 and N 2 The reaction gas is passed into the reaction chamber, where TiCl 4 The flow rate is 300sccm, NH 3 The flow rate is 150sccm, N 2 The flow rate is 900sccm, the pressure of the reaction chamber is -0.02MPa, the deposition is carried out at a temperature of 600°C, and the reaction time is 90s. After the reaction is completed, stop feeding the gas and cool it down.

[0028] The prepared TiN thin film is non-conductive and has a reflectivity of 35% in the infrared region, and the emissivity of the thin film tends to decrease as the wav...

Embodiment 3

[0030] 1) Clean the glass substrate with 10% hydrofluoric acid;

[0031] 2) Put the glass substrate on the graphite support of the reaction chamber of the chemical vapor deposition device, and the reaction chamber is evacuated to -0.02Mpa, and N 2 Clean the reaction chamber;

[0032] 3) Adjust the distance between the nozzle and the glass substrate to be 13cm;

[0033] 4) Heating the reaction chamber to 600°C;

[0034] 5) TiCl 4 , NH 3 and N 2 The reaction gas is passed into the reaction chamber, where TiCl 4 The flow rate is 300sccm, NH 3 The flow rate is 150sccm, N 2 The flow rate is 900sccm, the pressure of the reaction chamber is -0.02MPa, the deposition is carried out at a temperature of 600°C, and the reaction time is 90s. After the reaction is completed, stop feeding the gas and cool it down.

[0035] The resistivity of the prepared TiN film is 7.5×10 3 μΩ.cm, the reflectivity in the infrared region can reach more than 50%, and it shows an upward trend with the...

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Abstract

The invention discloses a method for depositing a TiN thin film on a glass substrate. The chemical vapor deposition method is adopted, and the resistivity of the TiN thin film deposited on the glass substrate is controlled by adjusting the distance between the nozzle of the reaction gas inlet pipe and the glass substrate. and surface morphology, optical properties, etc. The method of the invention is simpler and easier than the traditional process of controlling the resistivity of the thin film by adjusting the reaction temperature and the flow rate of the reactant.

Description

technical field [0001] The invention relates to a method for depositing a TiN thin film on a glass substrate. Background technique [0002] With the rapid development of science and technology and economy in the world, the consumption of energy is increasing day by day, which makes the problem of energy crisis increasingly prominent. As a national strategic issue, energy conservation has attracted widespread attention from all over the world. The development of architectural technology has made the proportion of glass in buildings more and more large, and even some high-rise buildings have adopted the structure of all-glass exterior walls in order to obtain a beautiful and elegant modern architectural aesthetic effect. Ordinary colorless glass is a good building material. Using it as a window is both beautiful and practical. It can pass through about 90% of solar radiation, but it also passes through near-infrared and mid-to-far infrared rays while it passes through visible ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/22
Inventor 赵高凌张天播郑鹏飞韩高荣
Owner ZHEJIANG UNIV
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