Method for modeling MOS tube resistor

Abstract

The invention discloses a method for modeling an MOS transistor resistance, which comprises the following steps: MOS transistors with different channel widths are selected and taken as MOS transistors to be modeled; aiming at every MOS transistor, the combined mode of the number of at least one polysilicon and the width of a single polysilicon channel is used for carrying out layout; the I-V characteristics of every MOS transistor generated according to the layout structure are measured; corresponding resistance is obtained according to the I-V characteristics; the obtained resistance is fitted and the relation of the resistance changing with the number of the polysilicon and the width of the polysilicon channel is obtained. The model obtained by the modeling method of the invention is closer to the measured value compared with that of the prior art, thus being more accurate.

Description

technical field [0001] The invention relates to a modeling method of MOS tube resistance. Background technique [0002] At present, for a MOS transistor with a larger size, such as a radio frequency MOS transistor, a layout structure of multiple polysilicon is often used in the layout design thereof. The layout structure of multiple polysilicon is to divide the MOS transistor with a certain channel width into multiple MOS transistors with the channel width as its divisor for equivalent replacement. The channel width of the MOS transistor after equalization is called The width of a single polysilicon channel, and the number of equal parts is equal to the number of polysilicon roots. For example, a MOS transistor with a channel width of 8um and a channel length of 0.13um can be equally divided into four single polysilicon MOS transistors with a channel width of 2um and a channel length of 0.13um, and the number of polysilicon is 4, and this 4 MOS tubes are connected in paral...

AI Technical Summary

Problems solved by technology

But in fact, the resistance on the MOS tube includes contact resistance and parasitic resistance, and in the existing model expression, the parameter Rdc describing the drain resistance of the MOS tube and the parameter Rsc describing the source resistance of the MOS tube are both constants, but due to the contact The resistance will change with the number and position of the contact holes of the MOS tube, so the resistance of the MOS tube simulated by the existing model will be quite different from the real situation, resulting in inaccurate simulation analysis of the MOS tube

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