Method for modeling MOS tube resistor
A technology of MOS tube and modeling method, which is applied in the fields of electrical digital data processing, special data processing applications, instruments, etc., can solve the problems of differences, inaccurate simulation analysis of MOS tubes, etc., and achieve the effect of accurate model
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[0019] The invention measures the I-V characteristics of MOS tubes produced according to different layout structures, obtains resistance values in various distribution situations, and obtains the variation of the resistance on the MOS tubes with the number of polysilicon roots and the width of a single polysilicon channel by fitting the resistance values changing relationship.
[0020] Such as figure 1 As shown, the present invention takes the modeling method of NMOS tube resistance as an example:
[0021] Step 1: Select MOS transistors with different channel widths as the MOS transistors to be modeled. For example, selecting NMOS transistors with a channel length of 0.13 microns and different channel widths, the channel width W ranges from 1 micron to 500 microns.
[0022] Step 2, for each MOS transistor, use at least one combination of polysilicon number and single polysilicon channel width for layout. As mentioned above, the layout structure of multiple polysilicon is ...
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