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A method in the fabrication of a memory device

A storage device and device technology, applied in the direction of static memory, digital memory information, information storage, etc., can solve the problem of not describing the printing technology

Inactive Publication Date: 2010-01-27
THIN FILM ELECTRONICS ASA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It claims to be able to inkjet print conductive patterns, but does not describe other printing techniques

Method used

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  • A method in the fabrication of a memory device
  • A method in the fabrication of a memory device
  • A method in the fabrication of a memory device

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Embodiment Construction

[0036] In order to understand the present invention, a brief description is now given of an exemplary method for fabricating a prior art organic memory device, in which the deposition of a circuit structure advantageously in one or more layers may be carried out by printing.

[0037] The memory cell in question comprises a pair of electrodes proximate a volume of electrically polarizable memory material, usually in the form of a ferroelectric polymer, and usually a parallel-plate capacitor-like structure. exist figure 1 The different parts of the structure shown in are the substrate 101 , the first electrode 102 , the memory layer 103 , the protective layer 104 and the second electrode 105 .

[0038] This simple structure is in sharp contrast to memory cells in conventional memory technologies, where one or more transistors or other semiconducting elements are required in association with each cell, and the result of low cost manufacturing is compelling. Hereinafter, a memor...

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Abstract

In a method for fabricating a memory device based on an electrically polarizable memory material in the form of an electret or ferroelectric material, the memory device comprises one or more layers with circuit structures provided exclusively or partially in a printing process. At least one protective interlayer is provided between at least two layers in the memory device, said protective interlayer exhibiting low solubility as well as low permeability for any solvents employed in the deposition of the other layers in the device. Use in fabricating a memory device, particularly a passive matrix-addressable memory device with an electret or ferroelectric memory material.

Description

technical field [0001] The invention relates to a method in the manufacture of a memory device based on an electrically polarizable memory material in the form of an electret or ferroelectric material, wherein the device comprises a layer with a circuit structure provided exclusively or partly in a printing process or multiple layers, wherein said one or more layers are deposited on a common substrate in a subsequent deposition step, fully or partially overlapping one on top of another or side by side, and at least one of which is dissolved in Layer material deposition in solvent. [0002] In particular, the invention relates to materials and manufacturing techniques for electrical circuits based on organic materials applied by printing processes. [0003] More specifically, the invention is applicable to printing conductive polymer electrodes on ferroelectric polymers, but is not limited to this use. Background technique [0004] Many researchers and companies have demons...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/22H01LH01L27/115
CPCH01L27/11502G11C11/22H01L24/48H01L2224/48463H01L2224/05599H01L2224/85399H01L2924/00014H10B53/00H01L2224/45015H01L2924/207H01L2224/45099H01L27/105
Inventor P·迪雷克勒夫A·哈格斯特龙H·G·古德森P·-E·诺达尔O·哈格尔
Owner THIN FILM ELECTRONICS ASA
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