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Substrate processing methodq

A processing method and substrate technology, applied in optics, instruments, opto-mechanical equipment, etc., can solve the problems of reduced resolution performance, development defects, etc., and achieve the effects of high resolution performance, suppression of development defects, and good circuit patterns

Inactive Publication Date: 2007-07-18
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
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Problems solved by technology

[0004] In such liquid immersion exposure, if particles, etc. are attached to the surface of the resist film in contact with the liquid or the surface of the lens, the resolution performance will be greatly reduced, and the particles on the surface of the resist film may cause development defects.
In addition, if post exposure bake or development is performed with particles attached to the resist film after the exposure treatment, there is a possibility that the particles may cause development defects.

Method used

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  • Substrate processing methodq

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Embodiment Construction

[0020] Embodiments of the present invention will be described below with reference to the drawings.

[0021] FIG. 1 is a schematic plan view showing a processing system for continuously performing resist application, exposure, and development. FIG. 2 is a front view thereof, and FIG. 3 is a rear view thereof. This processing system 100 has a resist coating and development processing apparatus 1 and an immersion exposure apparatus 13 for performing resist coating and development processing.

[0022] The resist coating and developing processing apparatus 1 has: a cassette station (cassettestation) 10 as a transfer station; a processing station 11 having a plurality of processing units; The wafer W is sent and received between the exposure apparatuses 13 .

[0023] The cassette station 10 transfers wafer cassettes CR that store a plurality of (for example, 25) wafers W as objects to be processed at predetermined intervals in a substantially horizontal posture in the vertical di...

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Abstract

A resist film is formed on a wafer surface, and an exposure beam is transmitted between an optical component, which faces the resist film to irradiate the resist film with the exposure beam, and the wafer surface. A liquid layer is formed of a liquid having a function of cleaning the wafer surface and the surface of the optical component, and the resist film is irradiated with the exposure beam projected from the optical component through the liquid layer in a prescribed pattern. The exposure completed wafer is developed and a prescribed pattern is formed on the wafer.

Description

technical field [0001] The present invention relates to a substrate processing method for exposing and developing a resist film provided on a substrate such as a semiconductor wafer, and to a computer-readable storage medium. Background technique [0002] In the photolithography step, which is one of the manufacturing steps of semiconductor devices, a resist solution is applied on the surface of a semiconductor wafer, and the formed resist film is exposed in a predetermined pattern. The film is developed, thereby forming a circuit pattern on the semiconductor wafer. [0003] Recently, the thinning, miniaturization, and high integration of circuit patterns of semiconductor devices are rapidly progressing, and along with this, it is necessary to improve the resolution performance of exposure. Therefore, ultra-short ultraviolet lithography (EUVL: Extreme Ultra Violet Lithography) or fluorine dimer (F 2 ) development of exposure technology, but, on the other hand, for example,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027G03F7/20
CPCG03F7/70341G03F7/2041G03F7/70916G03F7/70925H01L21/02057
Inventor 下青木刚京田秀治丹羽崇文
Owner TOKYO ELECTRON LTD
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