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Non-volatilization SRAM with metallic oxide as storage medium and uses thereof

A non-volatile, oxide technology, applied in information storage, static memory, digital memory information, etc., can solve the problems of complex manufacturing process, slow extension of small feature size, and high cost of ferroelectric FPGAs

Inactive Publication Date: 2007-09-26
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the characteristics of ferroelectric materials, their manufacturing process is complicated, resulting in relatively high cost of ferroelectric FPGAs, and the speed of extending to small feature sizes with technology generations is slow.

Method used

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  • Non-volatilization SRAM with metallic oxide as storage medium and uses thereof
  • Non-volatilization SRAM with metallic oxide as storage medium and uses thereof
  • Non-volatilization SRAM with metallic oxide as storage medium and uses thereof

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Embodiment Construction

[0032] The present invention will be described in more detail below with reference to the illustrations and examples. The present invention provides preferred embodiments, but should not be construed as being limited to the embodiments set forth herein.

[0033] Where the referenced figures are schematic illustrations of idealized embodiments of the invention, the illustrated embodiments of the invention should not be construed as limited to the specific shapes of the regions shown in the figures.

[0034] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly connected to" or "directly coupled to" another element, there are no intervening elements present.

[0035] The accompanying drawings (1-3) are explained in the technical background of the invention...

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Abstract

This invention belongs to integration circuit technique and relates to one metal non-evaporating SRAM by use of metal oxidation as memory medium, which comprises one traditional six-tube SRAM, one memory resistance and one reference resistance, wherein, the memory resistance down electrode is coupled to one upper pmos tube source end and its top electrode coupled to power line; one mmos connection tube is connected to memory resistance and the connection grating electrode is connected to the pmos tube grating; the leakage end is coupled to the memory resistance down electrode and the source end is introduced with one operation signal for memory resistance.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a non-volatile SRAM using metal oxide as a storage medium, a storage operation method thereof and an application of the non-volatile SRAM in FPGA devices. Background technique [0002] Static random access memory (static random access memory, referred to as SRAM) is a kind of memory with static access function, which can save the data stored in it without refreshing the circuit. SRAM has high performance, which is characterized by fast speed and energy saving. It does not need to cooperate with the memory refresh circuit, which can improve the overall work efficiency. But SRAM also has its disadvantages, such as its low integration. In addition, the biggest defect of SRAM is that the stored information will be lost after power failure, which is called volatile or volatile. [0003] Non-volatile SRAM (NVSRAM) combines the advantages of SRAM and non-volati...

Claims

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Application Information

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IPC IPC(8): G11C13/00G11C11/41
Inventor 林殷茵陈邦明李莹傅秀峰
Owner FUDAN UNIV
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